The low leakage current density of MIS with SiO2 thin film made by ICP-CVD

Y. M. Lu, S. I. Tsai, M. H. Hon

研究成果: Conference contribution

摘要

Thin Film Transistors (TFT) made from high quality semiconductor films can be used in active matrix liquid crystal displays (AMLCD). The properties of the gate oxide are very important in the operation of MIS. In this work, crystallized SiO2 films were deposited at extremely low temperature (90°C) by inductively coupled plasma chemical vapor deposition. The results show that the deposition rate increased approximately linearly with applied r.f. power in the ICP-CVD system. Only the (111) X-ray diffraction peak appeared in the range of the study. At 1000 Watts, the silicon dioxide film is amorphous which may be attributed to low deposition temperature. The value of the dielectric constant of the MIS varied from 3.75 to 4.05. From the I-V curve it can be seen that the SiO2 thin film has a lower leakage current density when prepared at 1750Watt. The lowest leakage current density obtained in this study was 6.8×10-8A/cm2 @V=IV. Copyright The Electrochemical Society.

原文English
主出版物標題Dielectrics for Nanosystems II
主出版物子標題Materials Science, Processing, Reliability, and Manufacturing
發行者Electrochemical Society Inc.
頁面261-266
頁數6
版本1
ISBN(電子)1566774381
ISBN(列印)1566774381, 9781566774383
出版狀態Published - 2006
事件2nd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - 209th Meeting of the Electrochemical Society - Denver, CO, United States
持續時間: 2006 5月 72006 5月 12

出版系列

名字ECS Transactions
號碼1
2
ISSN(列印)1938-5862
ISSN(電子)1938-6737

Conference

Conference2nd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - 209th Meeting of the Electrochemical Society
國家/地區United States
城市Denver, CO
期間06-05-0706-05-12

All Science Journal Classification (ASJC) codes

  • 工程 (全部)

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