This study presents a successful bias crystallization mechanism (BCM) based on an indium/glass substrate and applies it to fabrication of ZnInSnO (ZITO) transparent conductive oxide (TCO) films. The effects of bias-crystallization on electrical and structural properties of ZITO/In structure indicate that the current-induced Joule heating and interface diffusion were critical factors for low-temperature crystallization. With biases of 4V and 0.1A, the resistivity of the ZITO film was reduced from 3.08 × 10 -4 Ω*cm to 6.3 × 10 -5 Ω*cm. This reduction was attributed to the bias-induced energy, which caused indium atoms to diffuse into the ZITO matrix. This effectuated crystallizing the amorphous ZITO (a-ZITO) matrix at a lower temperature (approximately 170 °C) for a short period (20min) during a bias test. The low-temperature BCM developed for this study obtained an efficient conventional annealed treatment (higher temperature), possessed energy-saving and speed advantages, and can be considered a candidate for application in photoelectric industries.
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