The mechanism and evaluation of hot-carrier-induced performance degradation in 0.18-μm CMOS image sensor

T. H. Hsu, Y. K. Fang, D. N. Yaung, S. G. Wuu, H. C. Chien, C. S. Wang, J. S. Lin, C. H. Tseng, S. F. Chen, C. S. Lin, Yu-Cheng Lin

研究成果: Letter

摘要

An effective method to evaluate the hot-carrier-induced pixel performance degradation of 0.18-μm CMOS active pixel sensor has been reported. The hot carriers generated at the source follower transistor and absorbed by the nearby photodiode will cause the pixel performance degradation such as increase of dark signal and decrease of operation range. Based on the detailed measurements through overall operation conditions, a simple method has been proposed to evaluate the degradation induced by the hot carriers and, thus, provides a design guide to predict pixel performance.

原文English
頁(從 - 到)427-429
頁數3
期刊IEEE Electron Device Letters
25
發行號6
DOIs
出版狀態Published - 2004 六月 1
對外發佈Yes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

指紋 深入研究「The mechanism and evaluation of hot-carrier-induced performance degradation in 0.18-μm CMOS image sensor」主題。共同形成了獨特的指紋。

  • 引用此

    Hsu, T. H., Fang, Y. K., Yaung, D. N., Wuu, S. G., Chien, H. C., Wang, C. S., Lin, J. S., Tseng, C. H., Chen, S. F., Lin, C. S., & Lin, Y-C. (2004). The mechanism and evaluation of hot-carrier-induced performance degradation in 0.18-μm CMOS image sensor. IEEE Electron Device Letters, 25(6), 427-429. https://doi.org/10.1109/LED.2004.829000