The mechanism of Al contents (0-0.09 wt%) on the wettability and interfacial intermetallic compounds growth of Zn-25Sn/Cu

研究成果: Conference contribution

摘要

The wettability of the solders Zn-25Sn-XAl (x=0-0.09wt%) was investigated by dipping method. The interfaces between solders and Cu substrate were investigated by scanning electron microscopy (SEM), electron probe microanalysis (EPMA) and energy dispersive spectroscopy (EDS) equipped in transmission elctron microscopy (TEM). It was found that the addtion of Al enhances the wettability of the solders on Cu. The three layers (Cu,Al)Zn, (Cu,Al)5Zn8 and (Cu,Al)Zn5 were found at the interfaces between Cu substrate and solders. The thickness of intermetallic compounds layers increased with Al additions. The higher Al addition, the higher Al intetnsity was detected in the intermetallic compounds layer. The Al addition exhibits two stages behaivor on both wetting time and interfacial intermetallic growth.

原文English
主出版物標題18th International Conference on Electronic Packaging Technology, ICEPT 2017
編輯Chenxi Wang, Yanhong Tian, Tianchun Ye
發行者Institute of Electrical and Electronics Engineers Inc.
頁面80-88
頁數9
ISBN(電子)9781538629727
DOIs
出版狀態Published - 2017 九月 19
事件18th International Conference on Electronic Packaging Technology, ICEPT 2017 - Harbin, China
持續時間: 2017 八月 162017 八月 19

出版系列

名字18th International Conference on Electronic Packaging Technology, ICEPT 2017

Other

Other18th International Conference on Electronic Packaging Technology, ICEPT 2017
國家China
城市Harbin
期間17-08-1617-08-19

指紋

Soldering alloys
Intermetallics
Wetting
Electron probe microanalysis
Substrates
Energy dispersive spectroscopy
Microscopic examination
Scanning electron microscopy

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials
  • Metals and Alloys
  • Polymers and Plastics
  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering

引用此文

Niu, X., & Lin, K. L. (2017). The mechanism of Al contents (0-0.09 wt%) on the wettability and interfacial intermetallic compounds growth of Zn-25Sn/Cu. 於 C. Wang, Y. Tian, & T. Ye (編輯), 18th International Conference on Electronic Packaging Technology, ICEPT 2017 (頁 80-88). [8046412] (18th International Conference on Electronic Packaging Technology, ICEPT 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICEPT.2017.8046412
Niu, Xi ; Lin, Kwang Lung. / The mechanism of Al contents (0-0.09 wt%) on the wettability and interfacial intermetallic compounds growth of Zn-25Sn/Cu. 18th International Conference on Electronic Packaging Technology, ICEPT 2017. 編輯 / Chenxi Wang ; Yanhong Tian ; Tianchun Ye. Institute of Electrical and Electronics Engineers Inc., 2017. 頁 80-88 (18th International Conference on Electronic Packaging Technology, ICEPT 2017).
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abstract = "The wettability of the solders Zn-25Sn-XAl (x=0-0.09wt{\%}) was investigated by dipping method. The interfaces between solders and Cu substrate were investigated by scanning electron microscopy (SEM), electron probe microanalysis (EPMA) and energy dispersive spectroscopy (EDS) equipped in transmission elctron microscopy (TEM). It was found that the addtion of Al enhances the wettability of the solders on Cu. The three layers (Cu,Al)Zn, (Cu,Al)5Zn8 and (Cu,Al)Zn5 were found at the interfaces between Cu substrate and solders. The thickness of intermetallic compounds layers increased with Al additions. The higher Al addition, the higher Al intetnsity was detected in the intermetallic compounds layer. The Al addition exhibits two stages behaivor on both wetting time and interfacial intermetallic growth.",
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Niu, X & Lin, KL 2017, The mechanism of Al contents (0-0.09 wt%) on the wettability and interfacial intermetallic compounds growth of Zn-25Sn/Cu. 於 C Wang, Y Tian & T Ye (編輯), 18th International Conference on Electronic Packaging Technology, ICEPT 2017., 8046412, 18th International Conference on Electronic Packaging Technology, ICEPT 2017, Institute of Electrical and Electronics Engineers Inc., 頁 80-88, 18th International Conference on Electronic Packaging Technology, ICEPT 2017, Harbin, China, 17-08-16. https://doi.org/10.1109/ICEPT.2017.8046412

The mechanism of Al contents (0-0.09 wt%) on the wettability and interfacial intermetallic compounds growth of Zn-25Sn/Cu. / Niu, Xi; Lin, Kwang Lung.

18th International Conference on Electronic Packaging Technology, ICEPT 2017. 編輯 / Chenxi Wang; Yanhong Tian; Tianchun Ye. Institute of Electrical and Electronics Engineers Inc., 2017. p. 80-88 8046412 (18th International Conference on Electronic Packaging Technology, ICEPT 2017).

研究成果: Conference contribution

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N2 - The wettability of the solders Zn-25Sn-XAl (x=0-0.09wt%) was investigated by dipping method. The interfaces between solders and Cu substrate were investigated by scanning electron microscopy (SEM), electron probe microanalysis (EPMA) and energy dispersive spectroscopy (EDS) equipped in transmission elctron microscopy (TEM). It was found that the addtion of Al enhances the wettability of the solders on Cu. The three layers (Cu,Al)Zn, (Cu,Al)5Zn8 and (Cu,Al)Zn5 were found at the interfaces between Cu substrate and solders. The thickness of intermetallic compounds layers increased with Al additions. The higher Al addition, the higher Al intetnsity was detected in the intermetallic compounds layer. The Al addition exhibits two stages behaivor on both wetting time and interfacial intermetallic growth.

AB - The wettability of the solders Zn-25Sn-XAl (x=0-0.09wt%) was investigated by dipping method. The interfaces between solders and Cu substrate were investigated by scanning electron microscopy (SEM), electron probe microanalysis (EPMA) and energy dispersive spectroscopy (EDS) equipped in transmission elctron microscopy (TEM). It was found that the addtion of Al enhances the wettability of the solders on Cu. The three layers (Cu,Al)Zn, (Cu,Al)5Zn8 and (Cu,Al)Zn5 were found at the interfaces between Cu substrate and solders. The thickness of intermetallic compounds layers increased with Al additions. The higher Al addition, the higher Al intetnsity was detected in the intermetallic compounds layer. The Al addition exhibits two stages behaivor on both wetting time and interfacial intermetallic growth.

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Niu X, Lin KL. The mechanism of Al contents (0-0.09 wt%) on the wettability and interfacial intermetallic compounds growth of Zn-25Sn/Cu. 於 Wang C, Tian Y, Ye T, 編輯, 18th International Conference on Electronic Packaging Technology, ICEPT 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 80-88. 8046412. (18th International Conference on Electronic Packaging Technology, ICEPT 2017). https://doi.org/10.1109/ICEPT.2017.8046412