The negative differential resistance characteristics of double-barrier interband tunneling structures

研究成果: Article

5 引文 斯高帕斯(Scopus)

摘要

The tunneling mechanism responsible for negative differential resistance in GaSb/AlSb/GaSb/AlSb/InAs double-barrier interband tunneling structures was studied systematically. It was found that the peak current results from resonant interband tunneling and that the spacers make a significant contribution to the valley current. Furthermore, the optimal thicknesses for the GaSb well and AlSb barriers were predicted to be 65 and 10 Å, respectively, which agrees fairly well with experimental results. Our theoretical results give some useful design principles for this type of interband tunneling device.

原文English
頁(從 - 到)4640-4642
頁數3
期刊Journal of Applied Physics
70
發行號8
DOIs
出版狀態Published - 1991 十二月 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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