摘要
Second-harmonic generation from porous silicon with a magnitude of two orders greater than that from silicon crystalline wafers has been observed. The measured effective second-order nonlinear susceptibility [formula Omitted] for a p-type porous silicon is 1.96 × 10-7 esu which is estimated on the base of a bulk property rather than on quantum confinement owing to its large surface to volume ratio.
| 原文 | English |
|---|---|
| 頁（從 - 到） | 651-653 |
| 頁數 | 3 |
| 期刊 | IEEE Photonics Technology Letters |
| 卷 | 5 |
| 發行號 | 6 |
| DOIs | |
| 出版狀態 | Published - 1993 6月 |
All Science Journal Classification (ASJC) codes
- 電子、光磁材料
- 原子與分子物理與光學
- 電氣與電子工程