The optimum sintering condition for KSrPO4:Eu3+ phosphors applied in WLEDs

Ru Yuan Yang, Yu Ming Peng, Hsuan Lin Lai, Yan Kuin Su, Shoou Jinn Chang

研究成果: Article

8 引文 (Scopus)

摘要

This paper investigates the influence of various sintering temperatures on the microstructure and photoluminescence properties of KSr0.99PO4:Eu0.013+ phosphors prepared by microwave-assisted sintering. The package properties of KSr0.99PO4:Eu0.013+ phosphors combined with a n-UV InGaN chip are also investigated. To achieve maximum luminescence, the optimum sintering temperature for KSr0.99PO4:Eu0.013+ phosphors prepared by microwave assisted-sintering is 1200 °C due to the pure phase and uniform and large particles (as identified by XRD and SEM). The results of the package properties showed that KSr1−xPO4:xEu3+ (x = 0.01) phosphor sintered at 1200 °C by microwave-assisted sintering could emit orange-red light via the n-UV InGaN chip.

原文English
頁(從 - 到)S682-S687
期刊Ceramics International
43
DOIs
出版狀態Published - 2017 八月

指紋

Phosphors
Sintering
Microwaves
Luminescence
Photoluminescence
Temperature
Microstructure
Scanning electron microscopy

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Materials Chemistry

引用此文

Yang, Ru Yuan ; Peng, Yu Ming ; Lai, Hsuan Lin ; Su, Yan Kuin ; Chang, Shoou Jinn. / The optimum sintering condition for KSrPO4:Eu3+ phosphors applied in WLEDs. 於: Ceramics International. 2017 ; 卷 43. 頁 S682-S687.
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abstract = "This paper investigates the influence of various sintering temperatures on the microstructure and photoluminescence properties of KSr0.99PO4:Eu0.013+ phosphors prepared by microwave-assisted sintering. The package properties of KSr0.99PO4:Eu0.013+ phosphors combined with a n-UV InGaN chip are also investigated. To achieve maximum luminescence, the optimum sintering temperature for KSr0.99PO4:Eu0.013+ phosphors prepared by microwave assisted-sintering is 1200 °C due to the pure phase and uniform and large particles (as identified by XRD and SEM). The results of the package properties showed that KSr1−xPO4:xEu3+ (x = 0.01) phosphor sintered at 1200 °C by microwave-assisted sintering could emit orange-red light via the n-UV InGaN chip.",
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The optimum sintering condition for KSrPO4:Eu3+ phosphors applied in WLEDs. / Yang, Ru Yuan; Peng, Yu Ming; Lai, Hsuan Lin; Su, Yan Kuin; Chang, Shoou Jinn.

於: Ceramics International, 卷 43, 08.2017, p. S682-S687.

研究成果: Article

TY - JOUR

T1 - The optimum sintering condition for KSrPO4:Eu3+ phosphors applied in WLEDs

AU - Yang, Ru Yuan

AU - Peng, Yu Ming

AU - Lai, Hsuan Lin

AU - Su, Yan Kuin

AU - Chang, Shoou Jinn

PY - 2017/8

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N2 - This paper investigates the influence of various sintering temperatures on the microstructure and photoluminescence properties of KSr0.99PO4:Eu0.013+ phosphors prepared by microwave-assisted sintering. The package properties of KSr0.99PO4:Eu0.013+ phosphors combined with a n-UV InGaN chip are also investigated. To achieve maximum luminescence, the optimum sintering temperature for KSr0.99PO4:Eu0.013+ phosphors prepared by microwave assisted-sintering is 1200 °C due to the pure phase and uniform and large particles (as identified by XRD and SEM). The results of the package properties showed that KSr1−xPO4:xEu3+ (x = 0.01) phosphor sintered at 1200 °C by microwave-assisted sintering could emit orange-red light via the n-UV InGaN chip.

AB - This paper investigates the influence of various sintering temperatures on the microstructure and photoluminescence properties of KSr0.99PO4:Eu0.013+ phosphors prepared by microwave-assisted sintering. The package properties of KSr0.99PO4:Eu0.013+ phosphors combined with a n-UV InGaN chip are also investigated. To achieve maximum luminescence, the optimum sintering temperature for KSr0.99PO4:Eu0.013+ phosphors prepared by microwave assisted-sintering is 1200 °C due to the pure phase and uniform and large particles (as identified by XRD and SEM). The results of the package properties showed that KSr1−xPO4:xEu3+ (x = 0.01) phosphor sintered at 1200 °C by microwave-assisted sintering could emit orange-red light via the n-UV InGaN chip.

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