The origins in the transformation of ambipolar to n-type pentacene-based organic field-effect transistors

Tzung Da Tsai, Jer Wei Chang, Cheng Guang Wang, Ming Wei Lin, Tzung Fang Guo, Ten Chin Wen, Jung Hung Chang, Chih I. Wu

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)


With aluminum (Al) source-drain electrodes, the transfer characteristics of pentacene-based organic field-effect transistors (OFETs) change from ambipolar to n-type after 24 h of storage in a nitrogen-filled glove box Chang et al. (2011) [16]. The time-dependent decrease of hole current is associated with the interfacial reaction at the Al source-drain electrodes and pentacene, which was studied by in-situ ultraviolet photoemission spectroscopy and X-ray photoelectron spectroscopy in this work. Experimental results indicate that the interface of the Al and pentacene is partially oxidized, but the similar oxidation was not observed at the interface of the pentacene and silver. The time-dependent oxidization of Al and pentacene creates an interfacial barrier to suppress the hole injection from Al electrodes (extraction of electrons from pentacene). However, it shows minor effect in the injection of electrons from Al electrode. Since the rate of oxidation is related to the contact area of the pentacene and Al, co-evaporating a thin Al:pentacene interlayer between the pentacene and Al electrodes expands the contact surface and accelerates the reaction, which is suitable for the fabrication of n-type only pentacene-based OFETs. This study highlights the impact of the interfacial reaction in Al/pentacene interface for the transformation of ambipolar to n-type OFETs.

頁(從 - 到)1759-1766
期刊Organic Electronics
出版狀態Published - 2014 8月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 一般化學
  • 凝聚態物理學
  • 材料化學
  • 電氣與電子工程
  • 生物材料


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