The polymer gate dielectrics and source-drain electrodes on n-type pentacene-based organic field-effect transistors

Jer Wei Chang, Wei Lieh Hsu, Chang Yo Wu, Tzung Fang Guo, Ten Chin Wen

研究成果: Article同行評審

23 引文 斯高帕斯(Scopus)

摘要

Pentacene-based organic field-effect transistors (OFETs) with different polymer gate dielectrics, such as polyvinyl alcohol (PVA), poly 4-vinyl phenol (PVP), and polystyrene (PS), are fabricated to study the influence of polymer dielectrics on the formation of the n-type conduction (electron) channel in the pentacene active layer. The output characteristics of OFETs and capacitance-voltage measurements indicate that the formation of n-type conduction channel in the active layer is hindered by the electron traps at the contact interface with PVP dielectric layers, probably due to the high dissociation constant of protons of the hydroxyl groups in PVP. The dissociated protons at PVP dielectric layer form the electron traps and restrict the formation of n-type conduction channel. In comparison, OFETs applying PVA of relatively lower dissociation constant than that of PVP as the gate dielectric present the decent n-type output characteristics. The appropriate work function of source-drain electrodes as well as a trap-free dielectric layer are essentially important to determine the performance of pentacene-based n-type OFETs. The pentacene-based OFETs applying calcium as the source-drain electrodes and PS as the dielectric layer has the electron mobility of 0.077 cm 2s-1V-1 in this study.

原文English
頁(從 - 到)1613-1619
頁數7
期刊Organic Electronics
11
發行號10
DOIs
出版狀態Published - 2010 10月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 生物材料
  • 一般化學
  • 凝聚態物理學
  • 材料化學
  • 電氣與電子工程

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