TY - GEN
T1 - The properties of Ti-doped ZnO films before and after annealing in the different atmosphere
AU - Lin, Su Shia
AU - Huang, Jow Lay
PY - 2006
Y1 - 2006
N2 - A radio frequency power (r.f.) of 200W was supplied to ZnO target, and a direct current (d.c.) power of 30W was supplied to Ti target for the preparation of Ti-doped ZnO (ZnO:Ti) films. The Ti content was controlled by d.c. power, and maintained at 1.1 at.% as measured by XPS. The as-deposited ZnO:Ti films had polycrystalline structure and low resistivity (9.69×10 -3Ω-cm). After annealing in N2 or O2, ZnO:Ti films exhibited poor crystallinity, and the resistivity increased substantially. The lower optical energy gap (3.31 eV) could be obtained as ZnO:Ti film annealing in O2. However, the weak absorption in the visible region of the spectrum terminated at shorter wavelengths with the onset of the ultraviolet absorption edge for all samples. Annealing in N2 or O2 did not improve the properties of ZnO:Ti films.
AB - A radio frequency power (r.f.) of 200W was supplied to ZnO target, and a direct current (d.c.) power of 30W was supplied to Ti target for the preparation of Ti-doped ZnO (ZnO:Ti) films. The Ti content was controlled by d.c. power, and maintained at 1.1 at.% as measured by XPS. The as-deposited ZnO:Ti films had polycrystalline structure and low resistivity (9.69×10 -3Ω-cm). After annealing in N2 or O2, ZnO:Ti films exhibited poor crystallinity, and the resistivity increased substantially. The lower optical energy gap (3.31 eV) could be obtained as ZnO:Ti film annealing in O2. However, the weak absorption in the visible region of the spectrum terminated at shorter wavelengths with the onset of the ultraviolet absorption edge for all samples. Annealing in N2 or O2 did not improve the properties of ZnO:Ti films.
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U2 - 10.4028/3-908451-25-6.571
DO - 10.4028/3-908451-25-6.571
M3 - Conference contribution
AN - SCOPUS:37549035832
SN - 9783908451259
T3 - Solid State Phenomena
SP - 571
EP - 576
BT - Heat Treatment of Materials, AHTM ' 05 - Proceedings of the 3rd Asian Conference on Heat Treatment of Materials
PB - Trans Tech Publications Ltd
T2 - 3rd Asian Conference on Heat Treatment of Materials,(AHTM '05)
Y2 - 10 November 2005 through 12 November 2005
ER -