TY - JOUR
T1 - The red shift of ZnSSe metal-semiconductor-metal light emitting diodes with high injection currents
AU - Su, Y. K.
AU - Chen, W. R.
AU - Chang, S. J.
AU - Juang, F. S.
AU - Lan, W. H.
AU - Lin, A. C.H.
AU - Chang, H.
N1 - Funding Information:
Manuscript received September 8, 1999; revised January 26, 2000. This work was supported by the National Science Council of R.O.C. under Contract NSC-88-2215-E-006-005. The review of this paper was arranged by Editor P. K. Bhattacharya. Y. K. Su, W. R. Chen, and S. J. Chang are with the Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan, 70101 R.O.C. (e-mail: [email protected]). F. S. Juang is with the Department of Electro-Optics Engineering, National Huwei Institute of Technology, Huwei, Yunlin 63208, Taiwan, R.O.C. W. H. Lan, A. C. H. Lin, and H. Chang are with the Chung Shan Institute of Science and Technology, Lung-Tan, Taiwan 325, R.O.C. Publisher Item Identifier S 0018-9383(00)05190-X.
PY - 2000
Y1 - 2000
N2 - The reliable n +-ZnSSe metal-semiconductor-metal (MSM) blue-green light emitting diodes (LED's) have been fabricated. The contact metal was CuGe/Pt/Au. The current transport mechanisms agree very well with the back to back tunneling diodes. The kink phenomena were observed in the MSM current-voltage curves. In the metal-semiconductor interface, the element Zn in ZnSSe can be replaced by Cu results in some acceptor levels as radiative recombination centers in the MS interface. The peak wave-length in the LED electroluminescent (EL) spectra was strongly dependent on the injection currents from 5 to 40 mA. The peak wavelength and full width at half maximum are 510 and 10 nm, respectively, at 10 mA injection current. When the injection current increases to 15 mA, the peak wavelength shifted to 530 nm due to different recombination centers. Further increasing the injection currents, the peak wavelength shifted slightly to the long wavelength side.
AB - The reliable n +-ZnSSe metal-semiconductor-metal (MSM) blue-green light emitting diodes (LED's) have been fabricated. The contact metal was CuGe/Pt/Au. The current transport mechanisms agree very well with the back to back tunneling diodes. The kink phenomena were observed in the MSM current-voltage curves. In the metal-semiconductor interface, the element Zn in ZnSSe can be replaced by Cu results in some acceptor levels as radiative recombination centers in the MS interface. The peak wave-length in the LED electroluminescent (EL) spectra was strongly dependent on the injection currents from 5 to 40 mA. The peak wavelength and full width at half maximum are 510 and 10 nm, respectively, at 10 mA injection current. When the injection current increases to 15 mA, the peak wavelength shifted to 530 nm due to different recombination centers. Further increasing the injection currents, the peak wavelength shifted slightly to the long wavelength side.
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U2 - 10.1109/16.848273
DO - 10.1109/16.848273
M3 - Article
AN - SCOPUS:0034227132
SN - 0018-9383
VL - 47
SP - 1330
EP - 1333
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 7
ER -