The silica glass passivation for high-voltage power transistors

B. D. Liu, C. Y. Chang, K. C. Chen

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

A high quality silica glass was used to passivate high-voltage power transistors. With the self-gettering ability, the interface state density of silica glass is reduced after heat treatment. The properties of this glass are analysed and compared with that of thermal oxide. Experimental results show its good properties for passivation. The characteristics of passivated high-voltage transistors are also discussed.

原文English
頁(從 - 到)857-861
頁數5
期刊International Journal of Electronics
62
發行號6
DOIs
出版狀態Published - 1987 六月

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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