The silica glass passivation for high-voltage power transistors

B. D. Liu; C. Y. Chang; K. C. Chen

doi:10.1080/00207218708921038

The silica glass passivation for high-voltage power transistors

B. D. Liu, C. Y. Chang, K. C. Chen

電機工程學系

研究成果: Article › 同行評審

1 引文斯高帕斯（Scopus）

摘要

A high quality silica glass was used to passivate high-voltage power transistors. With the self-gettering ability, the interface state density of silica glass is reduced after heat treatment. The properties of this glass are analysed and compared with that of thermal oxide. Experimental results show its good properties for passivation. The characteristics of passivated high-voltage transistors are also discussed.

原文	English
頁（從 - 到）	857-861
頁數	5
期刊	International Journal of Electronics
卷	62
發行號	6
DOIs	https://doi.org/10.1080/00207218708921038
出版狀態	Published - 1987 六月

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1080/00207218708921038

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