We report a detailed structural and optical characterization of Ga 0.46In0.54NxP1-x (0 ≤ x ≤ 2%) films grown by gas-source molecular beam epitaxy on GaAs(001) substrates. The polarized high resolution x-ray rocking curves (HXRC) and contactless electroreflectance (CER) and piezoreflectance (PzR) spectra at room temperature show anisotropic character along the  and [11̄0] directions. Ordering-induced superlattice-like microstructure observed in high resolution transmission electron microscope (HTEM) images confirms the spontaneous ordering in Ga0.46In0.54NxP1-x layers. In addition, the temperature dependent optical properties are characterized via polarized PzR measurements in the range between 15 and 300 K. The PzR spectra obtained are fitted using the first derivative of a Lorentzian line-shape functional form. The valence band maximum, crystal field/strain splitting and spin - orbit splitting to conduction band transition energies, denoted respectively as Eg, Eg + Δ12 and E g + Δ13, are accurately determined. The temperature dependences of these near band edge critical point transition energies are analysed using the Varshni expression and an expression containing the Bose-Einstein occupation factor for phonons. The parameters that describe the temperature variation of the transition energies are evaluated and discussed.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics