The structural and optical characterization of a new class of dilute nitride compound semiconductors: GaInNP

H. P. Hsu, Y. S. Huang, Chung-Lin Wu, Y. K. Su, F. S. Juang, Y. G. Hong, C. W. Tu

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6 引文 斯高帕斯(Scopus)

摘要

We report a detailed structural and optical characterization of Ga 0.46In0.54NxP1-x (0 ≤ x ≤ 2%) films grown by gas-source molecular beam epitaxy on GaAs(001) substrates. The polarized high resolution x-ray rocking curves (HXRC) and contactless electroreflectance (CER) and piezoreflectance (PzR) spectra at room temperature show anisotropic character along the [110] and [11̄0] directions. Ordering-induced superlattice-like microstructure observed in high resolution transmission electron microscope (HTEM) images confirms the spontaneous ordering in Ga0.46In0.54NxP1-x layers. In addition, the temperature dependent optical properties are characterized via polarized PzR measurements in the range between 15 and 300 K. The PzR spectra obtained are fitted using the first derivative of a Lorentzian line-shape functional form. The valence band maximum, crystal field/strain splitting and spin - orbit splitting to conduction band transition energies, denoted respectively as Eg, Eg + Δ12 and E g + Δ13, are accurately determined. The temperature dependences of these near band edge critical point transition energies are analysed using the Varshni expression and an expression containing the Bose-Einstein occupation factor for phonons. The parameters that describe the temperature variation of the transition energies are evaluated and discussed.

原文English
期刊Journal of Physics Condensed Matter
16
發行號31
DOIs
出版狀態Published - 2004 八月 11

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

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