The structure of GaN-based transverse junction blue LED array for uniform distribution of injected current/carriers

Jin Wei Shi, Shi Hao Guol, C. S. Lin, Jinn Kong Sheu, Kuo Hua Chang, W. C. Lai, C. H. Kuo, C. J. Tun, Jen Inn Chyi

研究成果: Article同行評審

9 引文 斯高帕斯(Scopus)

摘要

In this study, we demonstrate a GaN-based transverse junction blue LED array. This device was realized by the regrowth of n-type GaN layers on the sidewall of p-type GaN and undoped multiple quantum wells (MQWs). Due to the transverse flow of injection carriers, problems related to nonuniform current distribution, nonuniform carrier distribution among different MQWs, and bias-dependent shape of the electroluminescence spectra such as that occurring in traditional GaN-based blue LEDs with vertical p-n junctions and large active area (<1 mm2) are all greatly minimized in our structure.

原文English
文章編號4957079
頁(從 - 到)1292-1297
頁數6
期刊IEEE Journal on Selected Topics in Quantum Electronics
15
發行號4
DOIs
出版狀態Published - 2009

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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