Zr and ZrNx thin films are grown on Si(001) by DC magnetron sputtering. The detailed microstructure evolution and its corresponding electrical properties are systematically studied with various processing parameters including applied power, N2/Ar ratio, substrate bias and substrate temperature by 4-point probe, EPMA and XRD. It is found that while the negative substrate bias can decrease the resistivity of both Zr and ZrNx thin films, the texture microstructure of each thin film in the series is changed differently. As increasing N2/Ar ratio, the resistivity decreases in the beginning and then increases rapidly, which results from the variations of compositions and phases, while this minimum resistivity point shifts to a higher N2/Ar ratio for the films sputtered under higher applied power. The substrate temperature not only decreases the ZrNx film resistivity, but also increases the (002) preferred orientations most efficiently. The cause of each phenomenon is briefly discussed. Finally, two samples showing different degrees of (002) to (111) textures are annealed to investigate the diffusion barrier properties from a sandwich structure of Cu/ZrNx/Si(001). Results from 4-point probe reveal that the film with higher degree of (111) textures has a superior thermal stability.
|頁（從 - 到）
|Materials Research Society Symposium - Proceedings
|Published - 2002
|Magnetic and Electronic Films - Microstructure, Texture and Application to Data Storage - San Francisco, United States
持續時間: 2002 4月 1 → 2002 4月 4
All Science Journal Classification (ASJC) codes