The tunability in mechanical properties and fracture toughness of sputtered silicon oxynitride thin films for MEMS-based infrared detectors

I. Kuan Lin, Ping Hsin Wu, Kuang Shun Ou, Kuo Shen Chen, Xin Zhang

研究成果: Conference contribution

2 引文 斯高帕斯(Scopus)

摘要

This paper presents the mechanical characterization of the elastic modulus, hardness and fracture toughness of silicon oxynitride films (SiON) with different oxygen and nitrogen content, subjected to thermal annealing processed at 400 °C and 800 °C. The Fourier-transform infrared (FT-IR) spectroscopy was employed to characterize the SiON films with respect to the absorbance peak in the infrared spectrum. The nanoindentation testing showed that both the elastic modulus and hardness slightly increased after thermal annealing. Finally, the fracture toughness of the SiON films were estimated using Vickers micro-indentation tests and the result revealed that the fracture toughness decreased with increasing rapid thermal annealing (RTA) temperature and nitrogen content. We believe these results benefit microelectromechanical systems (MEMS) in regards to maintaining the structural integrity and improving reliability performance.

原文English
主出版物標題Microelectromechanical Systems - Materials and Devices III
頁面123-128
頁數6
出版狀態Published - 2010 八月 30
事件2009 MRS Fall Meeting - Boston, MA, United States
持續時間: 2009 十一月 302009 十二月 4

出版系列

名字Materials Research Society Symposium Proceedings
1222
ISSN(列印)0272-9172

Other

Other2009 MRS Fall Meeting
國家United States
城市Boston, MA
期間09-11-3009-12-04

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • 引用此

    Lin, I. K., Wu, P. H., Ou, K. S., Chen, K. S., & Zhang, X. (2010). The tunability in mechanical properties and fracture toughness of sputtered silicon oxynitride thin films for MEMS-based infrared detectors. 於 Microelectromechanical Systems - Materials and Devices III (頁 123-128). (Materials Research Society Symposium Proceedings; 卷 1222).