The ultraviolet emission mechanism of ZnO thin film fabricated by sol-gel technology

Po-Tsung Hsieh, Y. C. Chen, K. S. Kao, M. S. Lee, C. C. Cheng

研究成果: Article同行評審

55 引文 斯高帕斯(Scopus)

摘要

ZnO thin films were successfully deposited on SiO2/Si substrate by sol-gel technology. The as-grown ZnO thin films were annealed under an ambient atmosphere from 600 to 900 °C by rapid thermal annealing (RTA) process. X-ray diffraction and scanning electron microscopy analyses reveal the physical structures of ZnO thin films. From PL measurement, two ultraviolet (UV) luminescence bands were obtained at 375 and 380 nm, and the intensity became stronger when the annealing temperature was increased. The strongest UV light emission appeared at annealing temperature of 900 °C. The chemical bonding state in ZnO films was investigated by using X-ray photoelectron spectrum. The mechanism of UV emission was also discussed.

原文English
頁(從 - 到)3815-3818
頁數4
期刊Journal of the European Ceramic Society
27
發行號13-15
DOIs
出版狀態Published - 2007 七月 6

All Science Journal Classification (ASJC) codes

  • 陶瓷和複合材料
  • 材料化學

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