The use of transparent indium-zinc oxide/(oxidized-Ni/Au) ohmic contact to GaN-based light-emitting diodes for light output improvement

Kai Ming Uang, Shui Jinn Wang, Shiue Lung Chen, Tron Min Chen, Bor Wen Liou

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

In this study, a low-resistant and high-transparent ohmic contact to p-GaN layer using an indium-zinc oxide (IZO)/(oxidized-Ni/Au) contact system was investigated to enhance light extraction of GaN-based light-emitting diodes (LEDs). Improvement in the light output of GaN-based blue LEDs as a function of the IZO film thickness was examined and an optimum thickness of around 300 nm has been found. Under an injection current in the 10-50 mA range, as compared to the case without IZO film, about 35-28% improvement in light output power (Lop) has been obtained. Comparisons of Lop and its reliability for LEDs with an IZO or indium-tin oxide transparent conduction layer were also made. In addition, compared to IZO/GaN samples without the patterned surface, the LEDs fabricated using a patterned IZO surface show a 23.1% improvement in Lop at 20 mA.

原文English
頁(從 - 到)2501-2506
頁數6
期刊Thin Solid Films
515
發行號4
DOIs
出版狀態Published - 2006 十二月 5

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 表面和介面
  • 表面、塗料和薄膜
  • 金屬和合金
  • 材料化學

指紋

深入研究「The use of transparent indium-zinc oxide/(oxidized-Ni/Au) ohmic contact to GaN-based light-emitting diodes for light output improvement」主題。共同形成了獨特的指紋。

引用此