The wetting interaction between electroless NiP deposit/Cu substrate and SnAg solder

Peishan Hsieh; Kwang-Lung Lin

doi:10.1109/IMPACT.2011.6117224

The wetting interaction between electroless NiP deposit/Cu substrate and SnAg solder

研究成果: Conference contribution

摘要

Electroless NiP deposit has been frequently mentioned as the barrier laer for Cu substrate or metallization for the soldering process. The NiP deposit is solderable with many solders at appropriate temperature and operation condition. The present study attempted to investigate the wetting behavior of the Sn3Ag solder on the electroless NiP with wetting balance at 250°C and 270°C. The cross section of the wetting specimen was further investigated for the interaction and the interfacial microstructure between the solder and the NiP/Cu substrate. The interface was composed of Ni ₃Sn ₄ and Ni ₃P compound layers. A Ni-Sn-P layer was detected between these two compound layers. The thickness of these layers was analyzed for the growth kinetics. The growth of these layers were found to follow an empirical power law log h(thickness) log k(constant) n log t(time). The variation in n values was discussed in relating to the growth mechanism of these two layers.

原文	English
主出版物標題	2011 6th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2011
頁面	29-32
頁數	4
DOIs	https://doi.org/10.1109/IMPACT.2011.6117224
出版狀態	Published - 2011
事件	2011 6th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2011 - Taipei, Taiwan 持續時間: 2011 10月 18 → 2011 10月 21

Other

Other	2011 6th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2011
國家/地區	Taiwan
城市	Taipei
期間	11-10-18 → 11-10-21

All Science Journal Classification (ASJC) codes

硬體和架構
控制與系統工程
電氣與電子工程

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10.1109/IMPACT.2011.6117224

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title = "The wetting interaction between electroless NiP deposit/Cu substrate and SnAg solder",

abstract = "Electroless NiP deposit has been frequently mentioned as the barrier laer for Cu substrate or metallization for the soldering process. The NiP deposit is solderable with many solders at appropriate temperature and operation condition. The present study attempted to investigate the wetting behavior of the Sn3Ag solder on the electroless NiP with wetting balance at 250°C and 270°C. The cross section of the wetting specimen was further investigated for the interaction and the interfacial microstructure between the solder and the NiP/Cu substrate. The interface was composed of Ni 3Sn 4 and Ni 3P compound layers. A Ni-Sn-P layer was detected between these two compound layers. The thickness of these layers was analyzed for the growth kinetics. The growth of these layers were found to follow an empirical power law log h(thickness) log k(constant) n log t(time). The variation in n values was discussed in relating to the growth mechanism of these two layers.",

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year = "2011",

doi = "10.1109/IMPACT.2011.6117224",

language = "English",

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pages = "29--32",

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note = "2011 6th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2011 ; Conference date: 18-10-2011 Through 21-10-2011",

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Hsieh, P & Lin, K-L 2011, The wetting interaction between electroless NiP deposit/Cu substrate and SnAg solder. 於 2011 6th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2011., 6117224, 頁 29-32, 2011 6th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2011, Taipei, Taiwan, 11-10-18. https://doi.org/10.1109/IMPACT.2011.6117224

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PY - 2011

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N2 - Electroless NiP deposit has been frequently mentioned as the barrier laer for Cu substrate or metallization for the soldering process. The NiP deposit is solderable with many solders at appropriate temperature and operation condition. The present study attempted to investigate the wetting behavior of the Sn3Ag solder on the electroless NiP with wetting balance at 250°C and 270°C. The cross section of the wetting specimen was further investigated for the interaction and the interfacial microstructure between the solder and the NiP/Cu substrate. The interface was composed of Ni 3Sn 4 and Ni 3P compound layers. A Ni-Sn-P layer was detected between these two compound layers. The thickness of these layers was analyzed for the growth kinetics. The growth of these layers were found to follow an empirical power law log h(thickness) log k(constant) n log t(time). The variation in n values was discussed in relating to the growth mechanism of these two layers.

AB - Electroless NiP deposit has been frequently mentioned as the barrier laer for Cu substrate or metallization for the soldering process. The NiP deposit is solderable with many solders at appropriate temperature and operation condition. The present study attempted to investigate the wetting behavior of the Sn3Ag solder on the electroless NiP with wetting balance at 250°C and 270°C. The cross section of the wetting specimen was further investigated for the interaction and the interfacial microstructure between the solder and the NiP/Cu substrate. The interface was composed of Ni 3Sn 4 and Ni 3P compound layers. A Ni-Sn-P layer was detected between these two compound layers. The thickness of these layers was analyzed for the growth kinetics. The growth of these layers were found to follow an empirical power law log h(thickness) log k(constant) n log t(time). The variation in n values was discussed in relating to the growth mechanism of these two layers.

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The wetting interaction between electroless NiP deposit/Cu substrate and SnAg solder

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