Theoretical potential of extremely high quality factors of β-Ga2O3 based MEMS resonators

Yen Ju Chen, Chang Jung Chung, Jian V. Li

研究成果: Article

摘要

We show theoretically and via simulation that β-Ga2O3 semiconductor is potentially a superior material for mechanical resonating structures applicable to micro-electro-mechanical system sensors. In particular, β-Ga2O3 may enable a thermoelastic dissipation loss limited quality factor on order of 108, which is the highest among all known conductive materials including metals and semiconductors. The Akhiezer limit of the quality factor and frequency product of resonators based on β-Ga2O3 is predicted to be extremely high at 3.3 × 1015 Hz. β-Ga2O3 based resonators may even exhibit higher quality factors than those based on ultra-low expansion glass due to the elimination of metal electrodes in the former. We also present a method to graphically extract the quality factor from the frequency response function without measuring the FWHM bandwidth.

原文English
文章編號011002
期刊Japanese Journal of Applied Physics
59
發行號1
DOIs
出版狀態Published - 2020 一月 1

    指紋

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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