Theory of carrier density in multigated doped graphene sheets with quantum correction

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19 引文 斯高帕斯(Scopus)

摘要

The quantum capacitance model is applied to obtain an exact solution for the space-resolved carrier density in a multigated doped graphene sheet at zero temperature, with quantum correction arising from the finite electron capacity of the graphene itself taken into account. The exact solution is demonstrated to be equivalent to the self-consistent Poisson-Dirac iteration method by showing an illustrative example, where multiple gates with irregular shapes and a nonuniform dopant concentration are considered. The solution therefore provides a fast and accurate way to compute spatially varying carrier density, on-site electric potential energy, as well as quantum capacitance for bulk graphene, allowing for any kind of gating geometry with any number of gates and any types of intrinsic doping.

原文English
文章編號125427
期刊Physical Review B - Condensed Matter and Materials Physics
87
發行號12
DOIs
出版狀態Published - 2013 三月 26

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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