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Thermal nitridation of the Si(111)-(7×7) surface studied by scanning tunneling microscopy and spectroscopy

  • C. L. Wu
  • , J. L. Hsieh
  • , H. D. Hsueh
  • , S. Gwo

研究成果: Article同行評審

35   連結會在新分頁中開啟 引文 斯高帕斯(Scopus)

摘要

By-using scanning tunneling microscopy and spectroscopy (STM and STS), the initial stages of NH3 exposure on Si(111)-(7×7) at different substrate temperatures and dosages have been studied. At room and very high (∼1050 °C) temperatures, the 7×7 surface structure remains and the nitrided sites appear darker, randomly distributing on the surface. Moreover, we find a constant ratio (∼3.46-3.83) of reacted center adatoms to reacted comer adatoms on the partially nitrided surfaces. At intermediately temperatures (∼900 °C), the majority (>90%) of the reacted surface forms the well-ordered silicon nitride 8×8 reconstruction. In this regime, hexagonal- and triangular-shaped nitride islands can be observed on the 8×8 and 7×7 surfaces, respectively. We have also used STS to investigate the changes of local density of states on the nitrogen-reacted 7×7 surfaces prepared by different conditions.

原文English
文章編號045309
頁(從 - 到)453091-453096
頁數6
期刊Physical Review B - Condensed Matter and Materials Physics
65
發行號4
出版狀態Published - 2002 1月 15

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學

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