Thermal relaxation processes probed by intersubband and inter-valence-band transitions in Si/Si1 - xGex multiple quantum wells

B. Adoram, D. Krapf, J. Shappir, A. Sa'ar, M. Levy, R. Beserman, S. G. Thomas, K. L. Wang

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

Thermal relaxation processes due to strain relaxation and Si/Ge interdiffusion were investigated in pseudomorphic p-type SiGe/Si quantum wells using infrared-polarization-resolved absorption spectroscopy. The samples were annealed from room temperature up to 1060°C and intersubband transitions between the lowest heavy-hole states and inter-valence-band transitions between heavy-hole and spin-split-off hole states were utilized to probe thermal activation processes. The strain relaxation process is activated at temperatures above 750°C and causes a decrease of the intersubband absorption and an increase of the inter-valence-band absorption. At temperatures above 940°C, we found that a second process of Si/Ge interdiffusion causes a reduction of all absorption lines in the spectrum. We proposed a simple model that provides a qualitative explanation to the above results.

原文English
頁(從 - 到)2232-2234
頁數3
期刊Applied Physics Letters
75
發行號15
DOIs
出版狀態Published - 1999 十月 11

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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