Thermal reliability and characterization of InGaP schottky contact with Ti/Pt/Au metals

Ching Ting Lee, Hung Pin Shiao, Nien Tze Yeh, Chang Da Tsai, Yen Tang Lyu, Yuan Kuang Tu

研究成果: Article同行評審

35 引文 斯高帕斯(Scopus)

摘要

We present the characteristics of Ti/Pt/Au Schottky contacts on wide bandgap InGaP semiconductors with surface pre-treatment before Schottky contact deposition, and investigate the influence of post heat treatment on Schottky diodes. With the pre-deposition surface etching by dilute HCl, dilute NH4OH, or buffer oxide etchant (BOE), the performance of Schottky diodes compared with samples without surface pre-treatment is improved significantly. Auger electron spectroscopy (AES) analysis of the thermally annealed Schottky diode has been performed to investigate the failure mechanism. No significant change was found for samples annealed up to 450°C. However, a drastic degradation of the barrier height and the ideality factor was observed in samples annealed at 500°C, which may be caused by the interdiffusion and penetration of metals into the semiconductor.

原文English
頁(從 - 到)1-5
頁數5
期刊Solid-State Electronics
41
發行號1
DOIs
出版狀態Published - 1997 一月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

指紋

深入研究「Thermal reliability and characterization of InGaP schottky contact with Ti/Pt/Au metals」主題。共同形成了獨特的指紋。

引用此