Thermal stability of post-growth-annealed Ga-doped MgZnO films grown by the RF sputtering method

Kuang Po Hsueh, Po Wei Cheng, Wen Yen Lin, Hsien Chin Chiu, Hsiang Chun Wang, Jinn Kong Sheu, Yu Hsiang Yeh

研究成果: Conference contribution


A radio-frequency magnetron sputtering technique and subsequent rapid thermal annealing (RTA) at 600, 700, 800, and 900 °C were implemented to grow high-quality Ga-doped MgxZn1-xO (GMZO) epi-layers. The GMZO films were deposited using a radio-frequency magnetron sputtering system and a 4 inch ZnO/MgO/Ga2O3 (75/20/5 wt %) target. The Hall results, X-ray diffraction (XRD), and transmittance were determined and are reported in this paper. The Hall results indicated that the increase in mobility was likely caused by the improved crystallization in the GMZO films after thermal annealing. The XRD results revealed that MgxZn1-xO (111) and MgO2 (200) peaks were obtained in the GMZO films. The absorption edges of the as-grown and annealed GMZO films shifted toward the short wavelength of 373 ran at a transmittance of 90%. According to these results, GMZO films are feasible for forming transparent contact layers for near-ultraviolet light-emitting diodes.

主出版物標題Synthesis, Characterization, and Applications of Functional Materials - Thin Films and Nanostructures
編輯Quanxi Jia, Dhananjay Kumar, Xavier Obradors, Kaushal K. Singh, Valentin Craciun, Maryline Guilloux-Viry, Menka Jain, Hiromitsu Kozuka, Sanjay Mathur
發行者Materials Research Society
出版狀態Published - 2014
事件2014 MRS Spring Meeting - San Francisco, United States
持續時間: 2014 四月 212014 四月 25


名字Materials Research Society Symposium Proceedings


Other2014 MRS Spring Meeting
國家/地區United States
城市San Francisco

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)
  • 凝聚態物理學
  • 材料力學
  • 機械工業


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