Thermal stability performance of metamorphic high electron mobility transistors (MHEMTs)

L. Y. Chen; K. Y. Chu; T. P. Chen; C. W. Hung; T. H. Tsai; L. A. Chen; S. Y. Cheng; W. C. Liu

doi:10.1109/EDSSC.2007.4450227

Thermal stability performance of metamorphic high electron mobility transistors (MHEMTs)

L. Y. Chen, K. Y. Chu, T. P. Chen, C. W. Hung, T. H. Tsai, L. A. Chen, S. Y. Cheng, W. C. Liu

微電子工程研究所

研究成果: Conference contribution

摘要

The thermal stability performance of double δ-doped In _0.42Al_0.58As/In_0.46Ga_0.54As metamorphic high electron mobility transistors with Au and Ti/Au metal gates are comprehensively studied and demonstrated. By evaporating the Ti/Au metal gate, the thermal stability of device characteristics are significantly improved as compared with the device with conventional metal gate (Au). Experimentally, the device with a Ti/Au metal gate simultaneously exhibits the considerably lower temperature degradation in turn-on voltage (-2.19 mV/K), breakdown voltage (-34 mV/K), impact ionization-induced gate current (1.63×10^-3 μA/mm·K), output conductance (1.23 μS/mm K), and voltage gain (-0.33 /K) as the temperature is increased from 300 to 510 K. Consequently, the studied device with a Ti/Au metal gate is a good candidate for high-speed and high-temperature applications.

原文	English
主出版物標題	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
頁面	721-724
頁數	4
DOIs	https://doi.org/10.1109/EDSSC.2007.4450227
出版狀態	Published - 2007
事件	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 - Tainan, Taiwan 持續時間: 2007 12月 20 → 2007 12月 22

出版系列

名字	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

Other

Other	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
國家/地區	Taiwan
城市	Tainan
期間	07-12-20 → 07-12-22

All Science Journal Classification (ASJC) codes

電氣與電子工程
電子、光磁材料

存取文件

10.1109/EDSSC.2007.4450227

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引用此

Chen, L. Y., Chu, K. Y., Chen, T. P., Hung, C. W., Tsai, T. H., Chen, L. A., Cheng, S. Y., & Liu, W. C. (2007). Thermal stability performance of metamorphic high electron mobility transistors (MHEMTs). 於 IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 (頁 721-724). 文章 4450227 (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007). https://doi.org/10.1109/EDSSC.2007.4450227

@inproceedings{529c271792104df8b81f27ead36769a8,

title = "Thermal stability performance of metamorphic high electron mobility transistors (MHEMTs)",

abstract = "The thermal stability performance of double δ-doped In 0.42Al0.58As/In0.46Ga0.54As metamorphic high electron mobility transistors with Au and Ti/Au metal gates are comprehensively studied and demonstrated. By evaporating the Ti/Au metal gate, the thermal stability of device characteristics are significantly improved as compared with the device with conventional metal gate (Au). Experimentally, the device with a Ti/Au metal gate simultaneously exhibits the considerably lower temperature degradation in turn-on voltage (-2.19 mV/K), breakdown voltage (-34 mV/K), impact ionization-induced gate current (1.63×10-3 μA/mm·K), output conductance (1.23 μS/mm K), and voltage gain (-0.33 /K) as the temperature is increased from 300 to 510 K. Consequently, the studied device with a Ti/Au metal gate is a good candidate for high-speed and high-temperature applications.",

author = "Chen, {L. Y.} and Chu, {K. Y.} and Chen, {T. P.} and Hung, {C. W.} and Tsai, {T. H.} and Chen, {L. A.} and Cheng, {S. Y.} and Liu, {W. C.}",

year = "2007",

doi = "10.1109/EDSSC.2007.4450227",

language = "English",

isbn = "1424406374",

series = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007",

pages = "721--724",

booktitle = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007",

note = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 ; Conference date: 20-12-2007 Through 22-12-2007",

}

Chen, LY, Chu, KY, Chen, TP, Hung, CW, Tsai, TH, Chen, LA, Cheng, SY & Liu, WC 2007, Thermal stability performance of metamorphic high electron mobility transistors (MHEMTs). 於 IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007., 4450227, IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007, 頁 721-724, IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007, Tainan, Taiwan, 07-12-20. https://doi.org/10.1109/EDSSC.2007.4450227

TY - GEN

T1 - Thermal stability performance of metamorphic high electron mobility transistors (MHEMTs)

AU - Chen, L. Y.

AU - Chu, K. Y.

AU - Chen, T. P.

AU - Hung, C. W.

AU - Tsai, T. H.

AU - Chen, L. A.

AU - Cheng, S. Y.

AU - Liu, W. C.

PY - 2007

Y1 - 2007

N2 - The thermal stability performance of double δ-doped In 0.42Al0.58As/In0.46Ga0.54As metamorphic high electron mobility transistors with Au and Ti/Au metal gates are comprehensively studied and demonstrated. By evaporating the Ti/Au metal gate, the thermal stability of device characteristics are significantly improved as compared with the device with conventional metal gate (Au). Experimentally, the device with a Ti/Au metal gate simultaneously exhibits the considerably lower temperature degradation in turn-on voltage (-2.19 mV/K), breakdown voltage (-34 mV/K), impact ionization-induced gate current (1.63×10-3 μA/mm·K), output conductance (1.23 μS/mm K), and voltage gain (-0.33 /K) as the temperature is increased from 300 to 510 K. Consequently, the studied device with a Ti/Au metal gate is a good candidate for high-speed and high-temperature applications.

AB - The thermal stability performance of double δ-doped In 0.42Al0.58As/In0.46Ga0.54As metamorphic high electron mobility transistors with Au and Ti/Au metal gates are comprehensively studied and demonstrated. By evaporating the Ti/Au metal gate, the thermal stability of device characteristics are significantly improved as compared with the device with conventional metal gate (Au). Experimentally, the device with a Ti/Au metal gate simultaneously exhibits the considerably lower temperature degradation in turn-on voltage (-2.19 mV/K), breakdown voltage (-34 mV/K), impact ionization-induced gate current (1.63×10-3 μA/mm·K), output conductance (1.23 μS/mm K), and voltage gain (-0.33 /K) as the temperature is increased from 300 to 510 K. Consequently, the studied device with a Ti/Au metal gate is a good candidate for high-speed and high-temperature applications.

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U2 - 10.1109/EDSSC.2007.4450227

DO - 10.1109/EDSSC.2007.4450227

M3 - Conference contribution

AN - SCOPUS:43049157719

SN - 1424406374

SN - 9781424406371

T3 - IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

SP - 721

EP - 724

BT - IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

T2 - IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

Y2 - 20 December 2007 through 22 December 2007

ER -

Thermal stability performance of metamorphic high electron mobility transistors (MHEMTs)

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