In this study, we demonstrate the thermal-stable characteristics of a metamorphic double δ-doped heterostructure field-effect transistor (MDDFET). The variations in drain current density and extrinsic transconductance of the studied device are as low as +0.3 and -2.5% from 300 to 420K. When the temperature increases from 360 to 380K, positive changes of transconductance and drain current are observed, which is different from that observed in most FETs. The thermal-stable characteristics can be attributed to the coupled wave function, inducing a larger carrier distribution in the undoped high-speed In0.6Ga0.6As region of the In0.5Ga 0.5As/δ+/In0.5Ga0.5As/In 0.6Ga0.4As/In0.5Ga0.5As/ δ+/In0.5Ga0.5As channel when temperature increases.
|頁（從 - 到）||6595-6597|
|期刊||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版狀態||Published - 2007 十月 9|
All Science Journal Classification (ASJC) codes
- 工程 (全部)
- 物理與天文學 (全部)