Thermalelectro-feedback model for multi-emitter finger power heterojunction bipolar transistor. Part I: Temperature profile

K. F. Yarn, Yeong-Her Wang, Mau-phon Houng, B. K. Lew

研究成果: Article

摘要

Poor thermal conductivity of GaAs, a self-heating phenomenon which results in the rapid rise of device temperature, is the major factor that limits and even degrades the electrical performance of GaAs-based heterojunction bipolar transistor (HBT) operated at high power densities. On the basis of this consideration, a numerical model is presented to study the interaction mechanism between the thermal and electrical behavior of AlGaAs/GaAs HBT with multiple-emitter fingers. The model mainly comprises a numerical model applicable for multi-finger HBT that solves the three-dimensional heat transfer equation. The device design parameters that influence the temperature profile and current distribution of the device are identified, and optimization concerning the device performance is made.

原文English
頁(從 - 到)439-455
頁數17
期刊International Journal of Electronics
93
發行號7
DOIs
出版狀態Published - 2006 七月 1

    指紋

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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