Thermalelectro-feedback model for multi-emitter finger power heterojunction bipolar transistor Part II: Current crush phenomenon

K. F. Yarn, Yeong-Her Wang, Mau-phon Houng, B. K. Lew

研究成果: Article

摘要

Current crush phenomenon, a heat-related mechanism that is commonly observed in experimental I - V characteristic of power HBT, is explained favourably by the thermoelectro-feedback model. A feasible method with proper device geometry or layout to suppress this undesirable phenomenon is provided and experimentally verified.

原文English
頁(從 - 到)581-588
頁數8
期刊International Journal of Electronics
93
發行號9
DOIs
出版狀態Published - 2006 九月 1

    指紋

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

引用此