Thermalelectro-feedback model for multi-emitter finger power heterojunction bipolar transistor Part II: Current crush phenomenon

K. F. Yarn; Y. H. Wang; M. P. Houng; B. K. Lew

doi:10.1080/08827510410001694941

Thermalelectro-feedback model for multi-emitter finger power heterojunction bipolar transistor Part II: Current crush phenomenon

K. F. Yarn
, Y. H. Wang
, M. P. Houng
, B. K. Lew

研究成果: Article › 同行評審

摘要

Current crush phenomenon, a heat-related mechanism that is commonly observed in experimental I - V characteristic of power HBT, is explained favourably by the thermoelectro-feedback model. A feasible method with proper device geometry or layout to suppress this undesirable phenomenon is provided and experimentally verified.

原文	English
頁（從 - 到）	581-588
頁數	8
期刊	International Journal of Electronics
卷	93
發行號	9
DOIs	https://doi.org/10.1080/08827510410001694941
出版狀態	Published - 2006 9月 1

All Science Journal Classification (ASJC) codes

電氣與電子工程

存取文件

10.1080/08827510410001694941

其它文件與鏈接

引用此

@article{5b5a6f2ca7db4ea58896b141aa2c15de,

title = "Thermalelectro-feedback model for multi-emitter finger power heterojunction bipolar transistor Part II: Current crush phenomenon",

abstract = "Current crush phenomenon, a heat-related mechanism that is commonly observed in experimental I - V characteristic of power HBT, is explained favourably by the thermoelectro-feedback model. A feasible method with proper device geometry or layout to suppress this undesirable phenomenon is provided and experimentally verified.",

author = "Yarn, \{K. F.\} and Wang, \{Y. H.\} and Houng, \{M. P.\} and Lew, \{B. K.\}",

year = "2006",

month = sep,

day = "1",

doi = "10.1080/08827510410001694941",

language = "English",

volume = "93",

pages = "581--588",

journal = "International Journal of Electronics",

issn = "0020-7217",

publisher = "Taylor and Francis Ltd.",

number = "9",

}

TY - JOUR

T1 - Thermalelectro-feedback model for multi-emitter finger power heterojunction bipolar transistor Part II

T2 - Current crush phenomenon

AU - Yarn, K. F.

AU - Wang, Y. H.

AU - Houng, M. P.

AU - Lew, B. K.

PY - 2006/9/1

Y1 - 2006/9/1

N2 - Current crush phenomenon, a heat-related mechanism that is commonly observed in experimental I - V characteristic of power HBT, is explained favourably by the thermoelectro-feedback model. A feasible method with proper device geometry or layout to suppress this undesirable phenomenon is provided and experimentally verified.

AB - Current crush phenomenon, a heat-related mechanism that is commonly observed in experimental I - V characteristic of power HBT, is explained favourably by the thermoelectro-feedback model. A feasible method with proper device geometry or layout to suppress this undesirable phenomenon is provided and experimentally verified.

UR - https://www.scopus.com/pages/publications/33745650930

UR - https://www.scopus.com/pages/publications/33745650930#tab=citedBy

U2 - 10.1080/08827510410001694941

DO - 10.1080/08827510410001694941

M3 - Article

AN - SCOPUS:33745650930

SN - 0020-7217

VL - 93

SP - 581

EP - 588

JO - International Journal of Electronics

JF - International Journal of Electronics

IS - 9

ER -

Thermalelectro-feedback model for multi-emitter finger power heterojunction bipolar transistor Part II: Current crush phenomenon

摘要

All Science Journal Classification (ASJC) codes

存取文件

其它文件與鏈接

指紋

引用此