Thermally stable Ir/n-ZnO Schottky diodes

S. J. Young, S. J. Chang, L. W. Ji, T. H. Meen, C. H. Hsiao, K. W. Liu, K. J. Chen, Z. S. Hu

研究成果: Article同行評審

18 引文 斯高帕斯(Scopus)

摘要

Temperature-dependent characteristics of ZnO Schottky diodes with Iridium (Ir) contact electrodes were investigated. Using Norde model, it was found that the effectively Schottky barrier heights of Ir on n-ZnO were around 0.837, 0.829, 0.801, 0.750 and 0.719 eV when measured at 25, 30, 50, 100 and 150 °C, respectively. Using Cheung's method, it was found that Schottky barrier heights between Ir and the n-ZnO were 0.824, 0.823, 0.789, 0.743 and 0.740 eV when measured at 25, 30, 50, 100 and 150 °C, respectively. The large Schottky barrier heights suggest that Ir is a potentially useful material for ZnO-based ultraviolet Schottky barrier photodetectors and metal-semiconductor- metal photodetectors.

原文English
頁(從 - 到)113-116
頁數4
期刊Microelectronic Engineering
88
發行號1
DOIs
出版狀態Published - 2011 一月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 原子與分子物理與光學
  • 凝聚態物理學
  • 表面、塗料和薄膜
  • 電氣與電子工程

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