TY - JOUR
T1 - Thermally stable Ir/n-ZnO Schottky diodes
AU - Young, S. J.
AU - Chang, S. J.
AU - Ji, L. W.
AU - Meen, T. H.
AU - Hsiao, C. H.
AU - Liu, K. W.
AU - Chen, K. J.
AU - Hu, Z. S.
N1 - Funding Information:
This work was supported in part by the Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University, Taiwan (D97-2700). This work was also in part supported by the Advanced Optoelectronic Technology Center, National Cheng Kung University, under projects from the Ministry of Education. This work was also supported by National Science Council of Taiwan under Contract numbers NSC 99-2218-E-150-003- and NSC 99-2622-E-150-012-CC3.
PY - 2011/1
Y1 - 2011/1
N2 - Temperature-dependent characteristics of ZnO Schottky diodes with Iridium (Ir) contact electrodes were investigated. Using Norde model, it was found that the effectively Schottky barrier heights of Ir on n-ZnO were around 0.837, 0.829, 0.801, 0.750 and 0.719 eV when measured at 25, 30, 50, 100 and 150 °C, respectively. Using Cheung's method, it was found that Schottky barrier heights between Ir and the n-ZnO were 0.824, 0.823, 0.789, 0.743 and 0.740 eV when measured at 25, 30, 50, 100 and 150 °C, respectively. The large Schottky barrier heights suggest that Ir is a potentially useful material for ZnO-based ultraviolet Schottky barrier photodetectors and metal-semiconductor- metal photodetectors.
AB - Temperature-dependent characteristics of ZnO Schottky diodes with Iridium (Ir) contact electrodes were investigated. Using Norde model, it was found that the effectively Schottky barrier heights of Ir on n-ZnO were around 0.837, 0.829, 0.801, 0.750 and 0.719 eV when measured at 25, 30, 50, 100 and 150 °C, respectively. Using Cheung's method, it was found that Schottky barrier heights between Ir and the n-ZnO were 0.824, 0.823, 0.789, 0.743 and 0.740 eV when measured at 25, 30, 50, 100 and 150 °C, respectively. The large Schottky barrier heights suggest that Ir is a potentially useful material for ZnO-based ultraviolet Schottky barrier photodetectors and metal-semiconductor- metal photodetectors.
UR - https://www.scopus.com/pages/publications/78049245860
UR - https://www.scopus.com/pages/publications/78049245860#tab=citedBy
U2 - 10.1016/j.mee.2010.09.010
DO - 10.1016/j.mee.2010.09.010
M3 - Article
AN - SCOPUS:78049245860
SN - 0167-9317
VL - 88
SP - 113
EP - 116
JO - Microelectronic Engineering
JF - Microelectronic Engineering
IS - 1
ER -