Thermally stable voltage-controlled perpendicular magnetic anisotropy in Mo|CoFeB|MgO structures

Xiang Li, Guoqiang Yu, Hao Wu, P. V. Ong, Kin Wong, Qi Hu, Farbod Ebrahimi, Pramey Upadhyaya, Mustafa Akyol, Nicholas Kioussis, Xiufeng Han, Pedram Khalili Amiri, Kang L. Wang

研究成果: Article同行評審

38 引文 斯高帕斯(Scopus)

摘要

We study voltage-controlled magnetic anisotropy (VCMA) and other magnetic properties in annealed Mo|CoFeB|MgO layered structures. The interfacial perpendicular magnetic anisotropy (PMA) is observed to increase with annealing over the studied temperature range, and a VCMA coefficient of about 40 fJ/V-m is sustained after annealing at temperatures as high as 430?°C. Ab initio electronic structure calculations of interfacial PMA as a function of strain further show that strain relaxation may lead to the increase of interfacial PMA at higher annealing temperatures. Measurements also show that there is no significant VCMA and interfacial PMA dependence on the CoFeB thickness over the studied range, which illustrates the interfacial origin of the anisotropy and its voltage dependence, i.e., the VCMA effect. The high thermal annealing stability of Mo|CoFeB|MgO structures makes them compatible with advanced CMOS back-end-of-line processes, and will be important for integration of magnetoelectric random access memory into on-chip embedded applications.

原文English
文章編號142403
期刊Applied Physics Letters
107
發行號14
DOIs
出版狀態Published - 2015 十月 5

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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