TY - JOUR
T1 - Thermoelectric properties of solution-prepared n-type and p-type CZTSSe thin films
AU - Hsiao, Yuan Wen
AU - Chee, Shang Ren
AU - Wu, Hsuan Ta
AU - Shih, Chuan Feng
N1 - Funding Information:
The authors are thankful for the support of the National Science and Technology Council, Taiwan under Contract No. ( 110-2224-E-006-006 , 111-2224-E-006-006 ) and Taiwan Semiconductor Research Institute ( JDP110-Y1-021 ). The authors would like to thank Ms. Hui–Jung Shih with the Core Facility Center of National Cheng Kung University for supporting the use of HR-SEM (Hitachi SU8000) and BRUKER XFlash 5010. Additionally, this work was also grateful by the Hierarchical Green-Energy Materials (Hi-GEM) Research Center supported, within the Higher Education Sprout Project of the Ministry of Education (MOST 110-2634-F-006 -017 ) in Taiwan.
Funding Information:
The authors are thankful for the support of the National Science and Technology Council, Taiwan under Contract No. (110-2224-E-006-006, 111-2224-E-006-006) and Taiwan Semiconductor Research Institute (JDP110-Y1-021). The authors would like to thank Ms. Hui–Jung Shih with the Core Facility Center of National Cheng Kung University for supporting the use of HR-SEM (Hitachi SU8000) and BRUKER XFlash 5010. Additionally, this work was also grateful by the Hierarchical Green-Energy Materials (Hi-GEM) Research Center supported, within the Higher Education Sprout Project of the Ministry of Education (MOST 110-2634-F-006 -017) in Taiwan.
Publisher Copyright:
© 2022
PY - 2023/2/15
Y1 - 2023/2/15
N2 - This research investigates the transport and thermoelectric behaviors of the CZTSSe thin films. Both p-type and n-type films were successfully synthesized, allowing us to comprehensively study the characteristics of the full-composition CZTS. Cu contents in CZTS precursors were controlled from Cu/Zn + Sn = 0.7 to 0.9 with a constant Zn/Sn = 1. After salinization, the Cu/Zn + Sn ratio in CZTS thin films shows positive deviation from the precursor, ranging from 0.78 to 1.1 that indicated a Zn or Sn loss with the increase of Cu contents. A decline of Zn/Sn ratio in the films from 1.53 to 1.2 was obtained when Cu/Zn + Sn in precursors increased from 0.7 to 0.9, indicating a Zn loss. Hall measurement showed that the increase of Cu contents yielded an increase in the conductivity and carrier concentration. Conducting type of the CZTS changed from p-type to n-type when the Cu/Zn + Sn exceeded 1. Absorption spectroscopy revealed a decrease of band gap of CZTS and Raman spectroscopy indicated an increase in the full width at half maximum when the Cu content was increased. Photoluminescence spectroscopy analyses indicated a defect related peak with 47 meV lower than the band gap. Accordingly, CuZn + SnZn was proposed to be the dominated defects of the Cu-rich n-type CZTS thin films, different from the CuZn dominated p-type films. As a result, we proposed that the n-type CZTS with Cu/Zn + Sñ1.01 and Zn/Sñ1.1 CZTS had the best power factor than other composition. The result could be reference for CZTS thermoelectric research in the future.
AB - This research investigates the transport and thermoelectric behaviors of the CZTSSe thin films. Both p-type and n-type films were successfully synthesized, allowing us to comprehensively study the characteristics of the full-composition CZTS. Cu contents in CZTS precursors were controlled from Cu/Zn + Sn = 0.7 to 0.9 with a constant Zn/Sn = 1. After salinization, the Cu/Zn + Sn ratio in CZTS thin films shows positive deviation from the precursor, ranging from 0.78 to 1.1 that indicated a Zn or Sn loss with the increase of Cu contents. A decline of Zn/Sn ratio in the films from 1.53 to 1.2 was obtained when Cu/Zn + Sn in precursors increased from 0.7 to 0.9, indicating a Zn loss. Hall measurement showed that the increase of Cu contents yielded an increase in the conductivity and carrier concentration. Conducting type of the CZTS changed from p-type to n-type when the Cu/Zn + Sn exceeded 1. Absorption spectroscopy revealed a decrease of band gap of CZTS and Raman spectroscopy indicated an increase in the full width at half maximum when the Cu content was increased. Photoluminescence spectroscopy analyses indicated a defect related peak with 47 meV lower than the band gap. Accordingly, CuZn + SnZn was proposed to be the dominated defects of the Cu-rich n-type CZTS thin films, different from the CuZn dominated p-type films. As a result, we proposed that the n-type CZTS with Cu/Zn + Sñ1.01 and Zn/Sñ1.1 CZTS had the best power factor than other composition. The result could be reference for CZTS thermoelectric research in the future.
UR - http://www.scopus.com/inward/record.url?scp=85143497523&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85143497523&partnerID=8YFLogxK
U2 - 10.1016/j.ceramint.2022.10.189
DO - 10.1016/j.ceramint.2022.10.189
M3 - Article
AN - SCOPUS:85143497523
SN - 0272-8842
VL - 49
SP - 6958
EP - 6964
JO - Ceramics International
JF - Ceramics International
IS - 4
ER -