Thermoelectric properties of the Co Si1-x Gex alloys

Y. K. Kuo, K. M. Sivakumar, S. J. Huang, C. S. Lue

研究成果: Review article同行評審

34 引文 斯高帕斯(Scopus)

摘要

The effects of Ge partial substitution for Si on the thermoelectric properties of Co Si1-x Gex alloys were investigated by means of thermal and electrical transport measurements. Electrical resistivity (ρ), Seebeck coefficient (S), and thermal conductivity (κ) measurements were performed on a series of Co Si1-x Gex alloys with x varying from 0 to 0.15. A substantial decrease in electrical resistivity and lattice thermal conductivity was noticed with increasing substitution level, whereas the Seebeck coefficient shows a weak variation with respect to Ge concentration. The thermoelectric efficiency was found to be enhanced by an order of magnitude in CoSi with Ge substitution. These observations were interpreted on the basis of the changes in the electronic band structure induced by Ge substitution.

原文English
文章編號123510
期刊Journal of Applied Physics
98
發行號12
DOIs
出版狀態Published - 2005

All Science Journal Classification (ASJC) codes

  • 物理與天文學 (全部)

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