TY - JOUR
T1 - Thermoelectric properties of the cubic AgPb10SbTe12
AU - Hsu, Kuei Fang
AU - Loo, Sim
AU - Chen, Wet
AU - Uher, Ctirad
AU - Hogan, Tim
AU - Kanatzidis, Mercouri G.
PY - 2003
Y1 - 2003
N2 - AgPb10SbTe12 is one member of the cubic family of materials AgPbmSbTem+2, which adopts NaCl structure where Ag, Pb and Sb atoms occupy the Na site and Te atoms occupy the Cl site. Ingots of this compound were prepared by a solid state reaction for thermoelectric measurements. AgPb10SbTe12 is a narrow band gap semiconductor with Eg∼0.26 eV. In order to optimize the ZT of this member, compositions with deficiency of Ag and Bi-substitution were examined and found to exhibit enhanced power factor at 300 K. The Bi-substituted ingot had ZT∼0.39 at 300 K and ZT∼0.68 at 400 K. Carrier concentration and the mobility measurements are reported.
AB - AgPb10SbTe12 is one member of the cubic family of materials AgPbmSbTem+2, which adopts NaCl structure where Ag, Pb and Sb atoms occupy the Na site and Te atoms occupy the Cl site. Ingots of this compound were prepared by a solid state reaction for thermoelectric measurements. AgPb10SbTe12 is a narrow band gap semiconductor with Eg∼0.26 eV. In order to optimize the ZT of this member, compositions with deficiency of Ag and Bi-substitution were examined and found to exhibit enhanced power factor at 300 K. The Bi-substituted ingot had ZT∼0.39 at 300 K and ZT∼0.68 at 400 K. Carrier concentration and the mobility measurements are reported.
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U2 - 10.1557/proc-793-s6.3
DO - 10.1557/proc-793-s6.3
M3 - Conference article
AN - SCOPUS:2442528703
SN - 0272-9172
VL - 793
SP - 155
EP - 160
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
T2 - Thermoelectric Materials 2003 - Research and Applications
Y2 - 1 December 2003 through 3 December 2003
ER -