Thickness dependence of conductivity in Bi2Se3 topological insulator

V. V. Chistyakov, A. N. Domozhirova, J. C.A. Huang, V. V. Marchenkov

研究成果: Conference article同行評審

3 引文 斯高帕斯(Scopus)

摘要

The electrical resistivity of thin films of a topological insulator of Bi2Se3 with a thickness of 10 nm to 75 nm, single crystal of Bi2Se3 with thickness of 0.65 mm in the temperature range from 4.2 to 300 K was measured. A size effect in the electrical conductivity of Bi2Se3 films was observed, i.e. linear dependence of the conductivity of the sample on its inverse thickness. It was suggested that similar effects should be observed in other TIs and systems with non-uniform distribution of direct current over the cross section of the sample.

原文English
文章編號012051
期刊Journal of Physics: Conference Series
1389
發行號1
DOIs
出版狀態Published - 2019 十一月 28
事件7th Euro-Asian Symposium on Trends in Magnetism, EASTMAG 2019 - Ekaterinburg, Russian Federation
持續時間: 2019 九月 82019 九月 13

All Science Journal Classification (ASJC) codes

  • 物理與天文學 (全部)

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