Thickness effect on the diffusion barrier properties of ZrN in Cu/ZrN/Si systems

Cheng Shi Chen, Chuan Pu Liu, Heng Ghieh Yang, Chi Y.A. Tsao

研究成果: Paper

摘要

Stoichiometric ZrN films were grown on Si (100) substrates using reactive dc magnetron sputtering and the resistivity and the lattice parameter of these films were studied by post-annealing up to 900°C. Upon annealing, not only increased grain size results but also is the higher mobility by relieving internal stress and by decreasing disorder in the lattice. Therefore, the effect of the annealing on the ZrN films is to decrease their resistivity. Subsequently, the diffusion behavior of the constituent species in the Cu/ZrN/ Si stacks was examined by annealing. The diffusion coefficient and activation energy of Cu in the ZrN barrier were determined with various ZrN thickness. The enhanced barrier properties for the thicker ZrN film was explained in terms of its microstructure.

原文English
頁面146-153
頁數8
出版狀態Published - 2003 一月 1
事件Copper Interconnects, New Contact Metallurgies/Structures, and Low-k Interlevel Dielectrics II - Proceedings of the International Symposium - Orlando, FL, United States
持續時間: 2003 十月 122003 十月 17

Other

OtherCopper Interconnects, New Contact Metallurgies/Structures, and Low-k Interlevel Dielectrics II - Proceedings of the International Symposium
國家United States
城市Orlando, FL
期間03-10-1203-10-17

    指紋

All Science Journal Classification (ASJC) codes

  • Electrochemistry

引用此

Chen, C. S., Liu, C. P., Yang, H. G., & Tsao, C. Y. A. (2003). Thickness effect on the diffusion barrier properties of ZrN in Cu/ZrN/Si systems. 146-153. 論文發表於 Copper Interconnects, New Contact Metallurgies/Structures, and Low-k Interlevel Dielectrics II - Proceedings of the International Symposium, Orlando, FL, United States.