Thin-Film Transistors with Amorphous Indium-Gallium-Oxide Bilayer Channel

C. P. Yang; S. J. Chang; T. H. Chang; C. Y. Wei; Y. M. Juan; C. J. Chiu; W. Y. Weng

doi:10.1109/LED.2017.2685619

Thin-Film Transistors with Amorphous Indium-Gallium-Oxide Bilayer Channel

C. P. Yang, S. J. Chang, T. H. Chang, C. Y. Wei, Y. M. Juan, C. J. Chiu, W. Y. Weng

研究成果: Article › 同行評審

19 引文斯高帕斯（Scopus）

摘要

The authors report the deposition of amorphous indium-gallium-oxide (a-IGO) films on glass substrate by co-sputtering and the fabrication of thin film transistors (TFTs) with a-IGO bilayer channel. It was found that the electron mobility, μ_FE, sub-threshold swing, SS, and I_on/I_off ratio of the fabricated TFTs were all better than those reported previously from the TFTs with single a-IGO channel. By properly controlling the sputtering powers, we achieved TFTs with μ_FE of 53.2 cm ²/Vs, SS of 0.19 V/decade and I_on/I_off ratio of 10⁷.

原文	English
文章編號	7884959
頁（從 - 到）	572-575
頁數	4
期刊	IEEE Electron Device Letters
卷	38
發行號	5
DOIs	https://doi.org/10.1109/LED.2017.2685619
出版狀態	Published - 2017 5月

All Science Journal Classification (ASJC) codes

電子、光磁材料
電氣與電子工程

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10.1109/LED.2017.2685619

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abstract = "The authors report the deposition of amorphous indium-gallium-oxide (a-IGO) films on glass substrate by co-sputtering and the fabrication of thin film transistors (TFTs) with a-IGO bilayer channel. It was found that the electron mobility, μFE, sub-threshold swing, SS, and Ion/Ioff ratio of the fabricated TFTs were all better than those reported previously from the TFTs with single a-IGO channel. By properly controlling the sputtering powers, we achieved TFTs with μFE of 53.2 cm 2/Vs, SS of 0.19 V/decade and Ion/Ioff ratio of 107.",

author = "Yang, {C. P.} and Chang, {S. J.} and Chang, {T. H.} and Wei, {C. Y.} and Juan, {Y. M.} and Chiu, {C. J.} and Weng, {W. Y.}",

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AU - Yang, C. P.

AU - Chang, S. J.

AU - Chang, T. H.

AU - Wei, C. Y.

AU - Juan, Y. M.

AU - Chiu, C. J.

AU - Weng, W. Y.

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Thin-Film Transistors with Amorphous Indium-Gallium-Oxide Bilayer Channel

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