Thin-Film Transistors with Amorphous Indium-Gallium-Oxide Bilayer Channel

C. P. Yang, Shoou-Jinn Chang, T. H. Chang, C. Y. Wei, Y. M. Juan, C. J. Chiu, W. Y. Weng

研究成果: Article同行評審

10 引文 斯高帕斯(Scopus)

摘要

The authors report the deposition of amorphous indium-gallium-oxide (a-IGO) films on glass substrate by co-sputtering and the fabrication of thin film transistors (TFTs) with a-IGO bilayer channel. It was found that the electron mobility, μFE, sub-threshold swing, SS, and Ion/Ioff ratio of the fabricated TFTs were all better than those reported previously from the TFTs with single a-IGO channel. By properly controlling the sputtering powers, we achieved TFTs with μFE of 53.2 cm 2/Vs, SS of 0.19 V/decade and Ion/Ioff ratio of 107.

原文English
文章編號7884959
頁(從 - 到)572-575
頁數4
期刊IEEE Electron Device Letters
38
發行號5
DOIs
出版狀態Published - 2017 五月 1

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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