Thin oxide breakdown mechanism of constant voltage stress on MOSFETs

J. H. Chen, C. T. Wei, S. C. Wong, Y. H. Wang

研究成果: Conference article

1 引文 斯高帕斯(Scopus)

摘要

The breakdown mechanism of constant-voltage stress in MOSFETs has been investigated. The results show that the transient evolution of stress current dominates the breakdown mechanism of the thin oxide. Due to the stress current decreasing with time induced by trapped charges, the trapped charge increases with stress time, i.e. proportional to Ts0.4. As the results indicate, the relation between trapped charges and time-to-breakdown, the trapped charge generation rate could be obtained. By investigating stress-induced degradations, the impacts of positive constant voltage stress and negative constant voltage stress for device degradation are also analyzed and compared.

原文English
頁(從 - 到)10-13
頁數4
期刊Physica Scripta T
101
出版狀態Published - 2002 一月 1
事件Proceedings of the 19th Nordic Semiconductor Meeting - Lyngby, Denmark
持續時間: 2001 五月 202001 五月 23

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Mathematical Physics
  • Condensed Matter Physics

指紋 深入研究「Thin oxide breakdown mechanism of constant voltage stress on MOSFETs」主題。共同形成了獨特的指紋。

  • 引用此