The breakdown mechanism of constant-voltage stress in MOSFETs has been investigated. The results show that the transient evolution of stress current dominates the breakdown mechanism of the thin oxide. Due to the stress current decreasing with time induced by trapped charges, the trapped charge increases with stress time, i.e. proportional to Ts0.4. As the results indicate, the relation between trapped charges and time-to-breakdown, the trapped charge generation rate could be obtained. By investigating stress-induced degradations, the impacts of positive constant voltage stress and negative constant voltage stress for device degradation are also analyzed and compared.
|頁（從 - 到）||10-13|
|期刊||Physica Scripta T|
|出版狀態||Published - 2002 1月 1|
|事件||Proceedings of the 19th Nordic Semiconductor Meeting - Lyngby, Denmark|
持續時間: 2001 5月 20 → 2001 5月 23
All Science Journal Classification (ASJC) codes