Thin oxide breakdown mechanism of constant voltage stress on MOSFETs

J. H. Chen; C. T. Wei; S. C. Wong; Y. H. Wang

Thin oxide breakdown mechanism of constant voltage stress on MOSFETs

J. H. Chen, C. T. Wei, S. C. Wong, Y. H. Wang

研究成果: Conference article › 同行評審

摘要

The breakdown mechanism of constant-voltage stress in MOSFETs has been investigated. The results show that the transient evolution of stress current dominates the breakdown mechanism of the thin oxide. Due to the stress current decreasing with time induced by trapped charges, the trapped charge increases with stress time, i.e. proportional to T_s^0.4. As the results indicate, the relation between trapped charges and time-to-breakdown, the trapped charge generation rate could be obtained. By investigating stress-induced degradations, the impacts of positive constant voltage stress and negative constant voltage stress for device degradation are also analyzed and compared.

原文	English
頁（從 - 到）	10-13
頁數	4
期刊	Physica Scripta T
卷	101
出版狀態	Published - 2002 1月 1
事件	Proceedings of the 19th Nordic Semiconductor Meeting - Lyngby, Denmark 持續時間: 2001 5月 20 → 2001 5月 23

All Science Journal Classification (ASJC) codes

原子與分子物理與光學
數學物理學
凝聚態物理學

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@article{7aad90df1a404f9c8974dd6d23fa8818,

title = "Thin oxide breakdown mechanism of constant voltage stress on MOSFETs",

abstract = "The breakdown mechanism of constant-voltage stress in MOSFETs has been investigated. The results show that the transient evolution of stress current dominates the breakdown mechanism of the thin oxide. Due to the stress current decreasing with time induced by trapped charges, the trapped charge increases with stress time, i.e. proportional to Ts0.4. As the results indicate, the relation between trapped charges and time-to-breakdown, the trapped charge generation rate could be obtained. By investigating stress-induced degradations, the impacts of positive constant voltage stress and negative constant voltage stress for device degradation are also analyzed and compared.",

author = "Chen, {J. H.} and Wei, {C. T.} and Wong, {S. C.} and Wang, {Y. H.}",

year = "2002",

month = jan,

day = "1",

language = "English",

volume = "101",

pages = "10--13",

journal = "Physica Scripta",

issn = "0031-8949",

publisher = "IOP Publishing Ltd.",

note = "Proceedings of the 19th Nordic Semiconductor Meeting ; Conference date: 20-05-2001 Through 23-05-2001",

}

TY - JOUR

T1 - Thin oxide breakdown mechanism of constant voltage stress on MOSFETs

AU - Chen, J. H.

AU - Wei, C. T.

AU - Wong, S. C.

AU - Wang, Y. H.

PY - 2002/1/1

Y1 - 2002/1/1

N2 - The breakdown mechanism of constant-voltage stress in MOSFETs has been investigated. The results show that the transient evolution of stress current dominates the breakdown mechanism of the thin oxide. Due to the stress current decreasing with time induced by trapped charges, the trapped charge increases with stress time, i.e. proportional to Ts0.4. As the results indicate, the relation between trapped charges and time-to-breakdown, the trapped charge generation rate could be obtained. By investigating stress-induced degradations, the impacts of positive constant voltage stress and negative constant voltage stress for device degradation are also analyzed and compared.

AB - The breakdown mechanism of constant-voltage stress in MOSFETs has been investigated. The results show that the transient evolution of stress current dominates the breakdown mechanism of the thin oxide. Due to the stress current decreasing with time induced by trapped charges, the trapped charge increases with stress time, i.e. proportional to Ts0.4. As the results indicate, the relation between trapped charges and time-to-breakdown, the trapped charge generation rate could be obtained. By investigating stress-induced degradations, the impacts of positive constant voltage stress and negative constant voltage stress for device degradation are also analyzed and compared.

UR - http://www.scopus.com/inward/record.url?scp=0036437643&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036437643&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0036437643

SN - 0031-8949

VL - 101

SP - 10

EP - 13

JO - Physica Scripta

JF - Physica Scripta

T2 - Proceedings of the 19th Nordic Semiconductor Meeting

Y2 - 20 May 2001 through 23 May 2001

ER -

Thin oxide breakdown mechanism of constant voltage stress on MOSFETs

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All Science Journal Classification (ASJC) codes

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