Thin oxide growth by intermediate annealing process

B. D. Liu; H. Y. Sun

doi:10.1016/0038-1101(91)90092-D

Thin oxide growth by intermediate annealing process

B. D. Liu
, H. Y. Sun

電機工程學系

研究成果: Article › 同行評審

3 引文斯高帕斯（Scopus）

原文	English
頁（從 - 到）	217-219
頁數	3
期刊	Solid State Electronics
卷	34
發行號	2
DOIs	https://doi.org/10.1016/0038-1101(91)90092-D
出版狀態	Published - 1991 2月

All Science Journal Classification (ASJC) codes

電子、光磁材料
凝聚態物理學
電氣與電子工程
材料化學

存取文件

10.1016/0038-1101(91)90092-D

其它文件與鏈接

Link to publication in Scopus

引用此

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title = "Thin oxide growth by intermediate annealing process",

author = "Liu, \{B. D.\} and Sun, \{H. Y.\}",

note = "Funding Information: Acknowledgements--The authors would like to thank Dr C. Y. Chang for his valuable suggestion and discussion. This work was supported in part by the National Science Council, Republic of China.",

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