Thinnest Nonvolatile Memory Based on Monolayer h-BN

Xiaohan Wu, Ruijing Ge, Po An Chen, Harry Chou, Zhepeng Zhang, Yanfeng Zhang, Sanjay Banerjee, Meng Hsueh Chiang, Jack C. Lee, Deji Akinwande

研究成果: Article同行評審

52 引文 斯高帕斯(Scopus)

摘要

2D materials have attracted much interest over the past decade in nanoelectronics. However, it was believed that the atomically thin layered materials are not able to show memristive effect in vertically stacked structure, until the recent discovery of monolayer transition metal dichalcogenide (TMD) atomristors, overcoming the scaling limit to sub-nanometer. Herein, the nonvolatile resistance switching (NVRS) phenomenon in monolayer hexagonal boron nitride (h-BN), a typical 2D insulator, is reported. The h-BN atomristors are studied using different electrodes and structures, featuring forming-free switching in both unipolar and bipolar operations, with large on/off ratio (up to 10 7 ). Moreover, fast switching speed (<15 ns) is demonstrated via pulse operation. Compared with monolayer TMDs, the one-atom-thin h-BN sheet reduces the vertical scaling to ≈0.33 nm, representing a record thickness for memory materials. Simulation results based on ab-initio method reveal that substitution of metal ions into h-BN vacancies during electrical switching is a likely mechanism. The existence of NVRS in monolayer h-BN indicates fruitful interactions between defects, metal ions and interfaces, and can advance emerging applications on ultrathin flexible memory, printed electronics, neuromorphic computing, and radio frequency switches.

原文English
文章編號1806790
期刊Advanced Materials
31
發行號15
DOIs
出版狀態Published - 2019 四月 12

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)
  • 材料力學
  • 機械工業

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