Three-dimensional ZnO nanostructure photodetector prepared with through silicon via technology

Yi Hao Chen, Shoou Jinn Chang, Ting Jen Hsueh

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

A ZnO-nanowire photodetector was prepared using threedimensional through silicon via (TSV) technology. The diameter and depth of the Si via were about 80 μm and 170 μm, respectively. Cu uniformly filled in each TSV, whose average resistance was about 0.9 mΩ. For the three-dimensional ZnO-nanowire photodetector, the photocurrent increased rapidly with a time constant of about 1 s when ultraviolet excitation was applied. The on-off current ratio was about 104.

原文English
頁(從 - 到)2878-2881
頁數4
期刊Optics Letters
40
發行號12
DOIs
出版狀態Published - 2015 一月 1

All Science Journal Classification (ASJC) codes

  • 原子與分子物理與光學

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