Three-terminal-controlled field-effect resistive hydrogen sensor

Ching Wen Hung, Kun Wei Lin, Hung Chi Chang, Yan Ying Tsai, Po Hsien Lai, Ssu I. Fu, Tzu Pin Chen, Huey Ing Chen, Wen Chau Liu

研究成果: Article同行評審

11 引文 斯高帕斯(Scopus)

摘要

Based on a Pd/oxide/AlGaAs pseudomorphic high-electron-mobility transistor (PHEMT) structure, an interesting three-terminal-controlled field-effect resistive hydrogen sensor is fabricated and studied. The influences of gate-source bias (VGS) on the hydrogen sensing properties are presented in this work. Experimental results show that the VGS bias significantly affects the resistance sensitivity, conductance variation, current variation, transient response, pressure-dependent and -independent rate constants, and response and recovery time constants. At 30 °C, a significant resistance response (SR = 100 × (Rair - RH2) / Rair) of 33.3% (82.8%) to 4.3 (9970) ppm H2/air is obtained at VGS = -0.6 V. Nevertheless, the largest conductance variation (ΔG) appears to be in the range between VGS = -0.3 and -0.4 V. An empirical equation is derived to explain the consistency between the calculated data and experimental results. Good linear relationship is observed between current variation and temperature under different VGS biases. The transient response at VGS = -0.3 V shows larger current variations, accompanying the longer response and recovery time constants than those at VGS = 0 V. Furthermore, on the basis of a kinetic adsorption analysis, the hydrogen pressure-dependent and -independent rate constants are obtained.

原文English
頁(從 - 到)549-556
頁數8
期刊Sensors and Actuators, B: Chemical
124
發行號2
DOIs
出版狀態Published - 2007 六月 26

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 儀器
  • 凝聚態物理學
  • 表面、塗料和薄膜
  • 金屬和合金
  • 電氣與電子工程
  • 材料化學

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