Three-terminal switching device with InGaAs/GaAs/InGaAs hole confinement layer

Wen Shiung Lour, Wen-Chau Liu, Jung Hui Tsai, Lih Wen Laih, Jiann Ru Chen, Ming Kwen Tsai

研究成果: Paper

摘要

We report a new switching device with back-to-back AlGaAs planar-doped barrier and InGaAs/GaAs/InGaAs well grown by molecular beam epitaxy, which exhibiting S-shape negative differential resistance (NDR). The device has a large potential barrier between the anode and cathode regions which can be modulated via a third terminal. The NDR phenomenon is attributed mainly to impact ionization within the undoped anode region. Due to the better confinement effect on holes for a double InGaAs/GaAs/InGaAs quantum well, experimental results reveal that good switch behavior and higher turn on current were obtained in our improved device. When external bias is applied to the third electrode, we observe voltage-dependent switching voltage and holding voltage, this introduces multiple stable regimes of the device operation. Therefore, base on a proper design, the studied device has good potential for proposed multiple-valued logic circuit application or acts as an inverter.

原文English
頁面95-98
頁數4
出版狀態Published - 1995 十二月 1
事件Proceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95 - Hong Kong, Hong Kong
持續時間: 1995 十一月 61995 十一月 10

Other

OtherProceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95
城市Hong Kong, Hong Kong
期間95-11-0695-11-10

    指紋

All Science Journal Classification (ASJC) codes

  • Computer Science Applications
  • Electrical and Electronic Engineering

引用此

Lour, W. S., Liu, W-C., Tsai, J. H., Laih, L. W., Chen, J. R., & Tsai, M. K. (1995). Three-terminal switching device with InGaAs/GaAs/InGaAs hole confinement layer. 95-98. 論文發表於 Proceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95, Hong Kong, Hong Kong, .