Three-terminal voltage-controlled GaAs quantum well switching device

研究成果: Article

2 引文 斯高帕斯(Scopus)

摘要

The characteristics of a three-terminal voltage-controlled GaAs quantum well switching device fabricated by molecular beam epitaxy (MBE) were investigated in this study. It was shown that this device has significant S-shaped negative-differential-resistance characteristics. The potential barrier between anode and cathode regions may be controlled or adjusted by the third terminal, gate electrode. The substantial effect on the switching behavior of the modulation of potential barrier demonstrates that the proposed structure exhibits potential for switching applications.

原文English
頁(從 - 到)163-166
頁數4
期刊Solid State Electronics
34
發行號2
DOIs
出版狀態Published - 1991 二月

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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