The characteristics of a three-terminal voltage-controlled GaAs quantum well switching device fabricated by molecular beam epitaxy (MBE) were investigated in this study. It was shown that this device has significant S-shaped negative-differential-resistance characteristics. The potential barrier between anode and cathode regions may be controlled or adjusted by the third terminal, gate electrode. The substantial effect on the switching behavior of the modulation of potential barrier demonstrates that the proposed structure exhibits potential for switching applications.
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