Threshold voltage sensitivity to doping density in extremely scaled MOSFETs

Meng Hsueh Chiang, Cheng Nang Lin, Guan Shyan Lin

研究成果: Article同行評審

9 引文 斯高帕斯(Scopus)

摘要

The dependence of the threshold voltage (VT) on channel doping for extremely scaled devices is investigated. This work is focused on the fundamental VT issue and its physical insight into the impact of the doping density on device characteristics. We find that the threshold voltage is, in fact, insensitive to doping over a wide range of doping density and such insensitivity is further extended by bandgap narrowing in nanoscale MOSFETs via analytical analyses and two-dimensional numerical device simulations (2003 Taurus-MEDICI User Guide (Mountain View, CA: Synopsis Inc.)). This result particularly suggests the scalability and feasibility of nanoscale double-gate MOSFETs.

原文English
頁(從 - 到)190-193
頁數4
期刊Semiconductor Science and Technology
21
發行號2
DOIs
出版狀態Published - 2006 二月 1

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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