Through-Silicon via Submount for Flip-Chip LEDs

Chun Liang Lu, Shoou Jinn Chang, Wei Shou Chen, Ting Jen Hsueh

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

A blue light emitting diode (LED) was prepared by a flip-chip (FC) LED and three-dimensional through-silicon via (3D-TSV) technique. The experimental results indicated that the diameter and length of the Si via were about 180 μm and 400 μm, respectively. The Cu was uniformly and high density filled in each TSV, and the average resistance was about 0.14 m. It was also found that the 96.43Sn-3.57at%Ag bumps were electroplated on the Cu plugged TSVs of a silicon substrate, and these were smoother at 250C. After reflow, a 3D blue light emitting diode was prepared by peak bonding at 250C and 1000 N pressure for 30 min. Compared with the output of the LED 417.17 mw/w, that of the 3D LED was 424.67 mw/w.

原文English
頁(從 - 到)R159-R162
期刊ECS Journal of Solid State Science and Technology
6
發行號12
DOIs
出版狀態Published - 2017

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料

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