Through-silicon: Via submount for the CuO/Cu2O nanostructured field emission display

Chun Liang Lu, Shoou-Jinn Chang, Ting Jen Hsueh

研究成果: Article

1 引文 (Scopus)

摘要

A three dimensional (3D) field emission display structure was prepared using CuO/Cu2O composite nanowires (NWs) and a three dimensional through silicon via (3D-TSV) technique. The experimental results indicated that the diameter and length of the Si via were about 100 μm and 200 μm, respectively. For the 3D field emission structure, high-density CuO/Cu2O composite nanowires (NWs) were grown on the concave TSV structure using thermal oxidation. The field emission turn-on field and enhancement factor of the CuO/Cu2O composite NWs were 15 V μm-1 and ∼1748, respectively. With regard to field emission displays, we successfully used the 3D field emission structure to excite the orange phosphors.

原文English
頁(從 - 到)706-709
頁數4
期刊RSC Advances
8
發行號2
DOIs
出版狀態Published - 2018 一月 1

指紋

Field emission displays
Silicon
Field emission
Nanowires
Composite materials
Phosphors
Oxidation

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Chemical Engineering(all)

引用此文

Lu, Chun Liang ; Chang, Shoou-Jinn ; Hsueh, Ting Jen. / Through-silicon : Via submount for the CuO/Cu2O nanostructured field emission display. 於: RSC Advances. 2018 ; 卷 8, 編號 2. 頁 706-709.
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Through-silicon : Via submount for the CuO/Cu2O nanostructured field emission display. / Lu, Chun Liang; Chang, Shoou-Jinn; Hsueh, Ting Jen.

於: RSC Advances, 卷 8, 編號 2, 01.01.2018, p. 706-709.

研究成果: Article

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