Ti/Al/Ti/Ni/Au ohmic contacts on AlGaN/GaN high electron mobility transistors with improved surface morphology and low contact resistance

Yu Sheng Chiu; Tai Ming Lin; Hong Quan Nguyen; Yu Chen Weng; Chi Lang Nguyen; Yueh Chin Lin; Hung Wei Yu; Edward Yi Chang; Ching Ting Lee

doi:10.1116/1.4862165

Ti/Al/Ti/Ni/Au ohmic contacts on AlGaN/GaN high electron mobility transistors with improved surface morphology and low contact resistance

Yu Sheng Chiu, Tai Ming Lin, Hong Quan Nguyen, Yu Chen Weng, Chi Lang Nguyen, Yueh Chin Lin, Hung Wei Yu, Edward Yi Chang, Ching Ting Lee

光電科學與工程學系

研究成果: Article › 同行評審

15 引文斯高帕斯（Scopus）

摘要

Optimizing surface morphology of ohmic contacts on GaN high electron mobility transistors continues to be a challenge in the GaN electronics industry. In this study, a variety of metal schemes were tested under various annealing conditions to obtain contacts with optimal qualities. A Ti/Al/Ti/Ni/Au (20/120/40/60/50 nm) metal scheme demonstrated the lowest contact resistance (R_c) and a smooth surface morphology, and the mechanisms were investigated by materials analysis. A Ti/Al/Ti/Ni/Au metal scheme with optimized Ti and Ni thicknesses can result in formation of a larger proportion of Al-Ni intermetallics and a continuous TiN interlayer, which results in smooth surface and low R_c.

原文	English
文章編號	011216
期刊	Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
卷	32
發行號	1
DOIs	https://doi.org/10.1116/1.4862165
出版狀態	Published - 2014

All Science Journal Classification (ASJC) codes

電子、光磁材料
儀器
製程化學與技術
表面、塗料和薄膜
電氣與電子工程
材料化學

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Chiu, Y. S., Lin, T. M., Nguyen, H. Q., Weng, Y. C., Nguyen, C. L., Lin, Y. C., Yu, H. W., Yi Chang, E., & Lee, C. T. (2014). Ti/Al/Ti/Ni/Au ohmic contacts on AlGaN/GaN high electron mobility transistors with improved surface morphology and low contact resistance. Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, 32(1), [011216]. https://doi.org/10.1116/1.4862165

@article{8a3a2820c5e04ef6b239fa91a9d116cf,

title = "Ti/Al/Ti/Ni/Au ohmic contacts on AlGaN/GaN high electron mobility transistors with improved surface morphology and low contact resistance",

abstract = "Optimizing surface morphology of ohmic contacts on GaN high electron mobility transistors continues to be a challenge in the GaN electronics industry. In this study, a variety of metal schemes were tested under various annealing conditions to obtain contacts with optimal qualities. A Ti/Al/Ti/Ni/Au (20/120/40/60/50 nm) metal scheme demonstrated the lowest contact resistance (Rc) and a smooth surface morphology, and the mechanisms were investigated by materials analysis. A Ti/Al/Ti/Ni/Au metal scheme with optimized Ti and Ni thicknesses can result in formation of a larger proportion of Al-Ni intermetallics and a continuous TiN interlayer, which results in smooth surface and low Rc.",

author = "Chiu, {Yu Sheng} and Lin, {Tai Ming} and Nguyen, {Hong Quan} and Weng, {Yu Chen} and Nguyen, {Chi Lang} and Lin, {Yueh Chin} and Yu, {Hung Wei} and {Yi Chang}, Edward and Lee, {Ching Ting}",

year = "2014",

doi = "10.1116/1.4862165",

language = "English",

volume = "32",

journal = "Journal of Vacuum Science and Technology B",

issn = "2166-2746",

publisher = "AVS Science and Technology Society",

number = "1",

}

Chiu, YS, Lin, TM, Nguyen, HQ, Weng, YC, Nguyen, CL, Lin, YC, Yu, HW, Yi Chang, E & Lee, CT 2014, 'Ti/Al/Ti/Ni/Au ohmic contacts on AlGaN/GaN high electron mobility transistors with improved surface morphology and low contact resistance', Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, 卷 32, 編號 1, 011216. https://doi.org/10.1116/1.4862165

TY - JOUR

T1 - Ti/Al/Ti/Ni/Au ohmic contacts on AlGaN/GaN high electron mobility transistors with improved surface morphology and low contact resistance

AU - Chiu, Yu Sheng

AU - Lin, Tai Ming

AU - Nguyen, Hong Quan

AU - Weng, Yu Chen

AU - Nguyen, Chi Lang

AU - Lin, Yueh Chin

AU - Yu, Hung Wei

AU - Yi Chang, Edward

AU - Lee, Ching Ting

PY - 2014

Y1 - 2014

N2 - Optimizing surface morphology of ohmic contacts on GaN high electron mobility transistors continues to be a challenge in the GaN electronics industry. In this study, a variety of metal schemes were tested under various annealing conditions to obtain contacts with optimal qualities. A Ti/Al/Ti/Ni/Au (20/120/40/60/50 nm) metal scheme demonstrated the lowest contact resistance (Rc) and a smooth surface morphology, and the mechanisms were investigated by materials analysis. A Ti/Al/Ti/Ni/Au metal scheme with optimized Ti and Ni thicknesses can result in formation of a larger proportion of Al-Ni intermetallics and a continuous TiN interlayer, which results in smooth surface and low Rc.

AB - Optimizing surface morphology of ohmic contacts on GaN high electron mobility transistors continues to be a challenge in the GaN electronics industry. In this study, a variety of metal schemes were tested under various annealing conditions to obtain contacts with optimal qualities. A Ti/Al/Ti/Ni/Au (20/120/40/60/50 nm) metal scheme demonstrated the lowest contact resistance (Rc) and a smooth surface morphology, and the mechanisms were investigated by materials analysis. A Ti/Al/Ti/Ni/Au metal scheme with optimized Ti and Ni thicknesses can result in formation of a larger proportion of Al-Ni intermetallics and a continuous TiN interlayer, which results in smooth surface and low Rc.

UR - http://www.scopus.com/inward/record.url?scp=84893240243&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84893240243&partnerID=8YFLogxK

U2 - 10.1116/1.4862165

DO - 10.1116/1.4862165

M3 - Article

AN - SCOPUS:84893240243

VL - 32

JO - Journal of Vacuum Science and Technology B

JF - Journal of Vacuum Science and Technology B

SN - 2166-2746

IS - 1

M1 - 011216

ER -

Ti/Al/Ti/Ni/Au ohmic contacts on AlGaN/GaN high electron mobility transistors with improved surface morphology and low contact resistance

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